Photoluminescence properties of CaS1？xSex : Eu phosphors (CaS1-xSex:Eu 형광체의 발광 특성)

Young Duk Huh (허영덕); 유은경

Photoluminescence properties of CaS1？xSex : Eu phosphors

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2007, 17(5), pp.204~209
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Young Duk Huh ¹, 유은경 ¹

¹단국대학교

Accredited

ABSTRACT

We synthesized a series of CaS1 xSex: Eu red-emitting phosphors for application in phosphor-converted three-band white light emiting diode (LED). The photoluminescence and structural properties of CaS1 xSex : Eu were examined.The CaS1 xSex: Eu phosphors have a strong absorption at 455 nm, which is the emission wavelength of a blue LED.CaS : Eu has a red emission peak at 651 nm due to the 4f65d1 (T2g)→ 4f7 (8S7/2) transition of the Eu2+. The emission peakof CaS1 xSex:Eu is shifted from 651 to 598 nm with increasing Se content. CaS1 xSex: Eu can be used as wavelength-tunable red-emitting phosphors pumped by a blue LED. We also fabricated a three-band white LED by doping SrGa2S4:Euand CaS0.50Se0.50: Eu phosphors onto a blue LED chip.Key words CaS1 xSex: Eu, Red-emitting phosphor, White LEDCaS1xSex:Eu .... .. ....... ...†..... ... , .. , 448-701(2007. 8. 28. .. )(2007. 9. 20. .... ). . ... -.. 3.. .. .. .... (LED). ... ... ... CaS1 xSex:Eu .... ..... .CaS1 xSex:Eu. ... .. ... ..... . CaS1 xSex:Eu .... .. .. ..... .. ... 455 nm.... ... .. . Eu2+. 4f65d1 (T2g) → 4f7 (8S7/2) .. ... CaS : Eu. 651 nm.. .. .. .... ... .. .CaS1 xSex:Eu. .. .... Se. .... ... 651 nm.. 598 nm.. ... .. . CaS1 xSex:Eu .... ..LED. .... .. ... .. ... .. .... ... . .. . SrGa2S4:Eu. CaS0.50Se0.50:Eu .... .. .

KEYWORDS

CaS1 . xSex : Eu, Red-emitting phosphor, White LEDt~

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Citation status

* References for papers published after 2025 are currently being built.

[journal] / 1995 / Current and temperature dependence of electroluminescence ofInGaN-based UV/Blue/Green light-emitting diodes 37(11B) : L1332~

[journal] / 1995 / High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes 67(13) : 1868~

[journal] / 1998 / The role of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes 281 : 956~

[journal] / 1997 / Luminescence conversion of blue light emitting diodes 64 : 417~

[journal] / 2002 / The optical properties of (Y1 . xGdx)3 . z(Al1 . yGay)5O12 : Cez phosphors for white LED 23(10) : 3 1435~

[journal] / 2003 / Energy of the first 4f7→4f65d transition of Eu2+ in inorganic compounds 104(4) : 239~

[journal] / 2006 / Luminescence properties of potential Sr1 . xCaxGa2S4 : Eu greenand greenish-yellow-emitting phosphors for white LED 153(7) : H42~

[journal] / 2006 / Methods to improve the fluorescence intensity of CaS : Eu2+ red-emitting phosphor for white LED 130(1-3) : 189~

[journal] / 2006 / Luminescent properties of CaSe1 . xSx : Eu and application in LEDs 9(8) : G262~

[journal] / 2003 / Optical properties of three-band white light emitting diodes 150(2) : H57~

[journal] / 2005 / Preparation and luminescence properties of (Ca1 . xSrx)S : Eu2+ red-emitting phosphor for white LED 111(3) : 139~

[journal] / 1995 / CRC Handbook of Chemistry and Physics / 70th Ed.; CRC Press : F187~

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