Effect of anisotropic diffusion coefficient on the evolution of the interface void in copper metallization for integrated circuits

Junho Choy (최준호)

Effect of anisotropic diffusion coefficient on the evolution of the interface void in copper metallization for integrated circuits

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2004, 14(2), pp.58-62
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Junho Choy ¹

¹Simon Fraser University

Accredited

ABSTRACT

The shape evolution of the interface void of copper metalization for intergrated circuits under electromigrationstres is modeled. A 2-dimensional finite-diference numerical method is employed for computing time evolution of thevoid shape driven by surface difusion, and the electrostatic problem is solved by boundary element method. When thedifusion coefficient is isotropic, the numerical results agree wel with the known case of wedge-shape void evolution. Thenumerical results for the anisotropic difusion coefficient show that the initialy circular void evolves to become a fatal slit-like shape when the electron wind force is large, while the shape becomes non-fatal and circular as the electron wind forcedecreases. The results indicate that the open circuit failure caused by slit-like void shape is far less probable to be observedfor copper metalization under a normal electromigration stress condition.

KEYWORDS

Electromigration, Void, Copper metalization, Surface difusion

Citation status

* References for papers published after 2023 are currently being built.

[journal] / 1999 / lectromigration in integrated circuit con-ductors

[journal] / 1999 / A physically based model of electromigration and stress-induced void formation inmicroelectronic interconnects 86 : 1932~

[journal] / 1991 / Activation energy for elec-tromigration in Cu films : 175~

[journal] / 1993 / valuation of electromigration and stresmigration reliabilities of coper interconects by asimple pulsed-current stresing technique Tech. Dig. : 269~

[journal] / 1991 / arge-electromigration-resis-tance copper interconect technology for sub-halfmi-cron ULSIs : 285~

[journal] / 1992 / Fatal electromigration voids in narow alu-minum-copper interconnect Appl. Phys. Let. 61 : 2170~

[journal] / 1992 / lit morphology of electromigration induced open cir-cuit failures in fine line conductors J. Apl. Phys. 72 : 3201~

[journal] / 1994 / lectromigration failure by shape change of voids in Fig. 4. Evolution of semi-circular voids with radius ri = 0.6w and an anisotropic difusion coeficient with two-fold crystal symmetry . The normalized difusion coeficient is given by Ds/Do = 1 + Acos 2 q and q is localsurface orientation. The intensity of the electron wind force is given by t is in the unit of 10 -4 62 J.H. Choy bamboo lines tion time : 1563~

[journal] / 1997 / Electromigration-induced transgranular failure mechanisms in single-crystal alumi-num interconnects 81 : 6062~

[journal] / 19941944. / transgranular slits in interconects

[journal] / 1997 / lectromigration mechanisms in conductor lines: void shape changes^slit-like fail-ure^ 45 : 1599~

[journal] / 1999 / heoretical analysis ofelectromigration-induced failure of metalic thin films due to transgranular void propagation 85 : 23~

[journal] / 1999 / nfluence of anisotro-pic surface difusivity on electromigration induced void migration and evolution 85 : 3168~

[journal] / 2001 / omputer simulation of void growth dynamics under the action of electromigra-tion and capilary forces in narrow thin interconects 90 : 1564~

[journal] / 1998 / fect of icrostructure on electromigration kinetics in Cu Lines J : 1626~

[journal] / 2002 / Mechanism of electromigration failure in submicron Cu interconnects 31 : 1004~

[journal] / 2000 / urface electromigration in copper interconnects Microelectron. . 40 : 69~

[journal] / lectromigration reliability issues in dual-damascene Cu interconections : 403~

[journal] / 2001 / echanisms for very long electromigra-tion lifetime in dual-damascene Cu interconnectionsAppl. 78 : 904~

[journal] / 2003 / educed Cu interface difusion by CoWP surface coating Microelectron. Engineering 70 70 : 406~

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