ZnO film growth on sapphire substrate by RF magnetron sputtering (RF 스퍼터링 법에 의한 사피이어 기판상의 ZnO 박막의 성장)

Kang, Seung-Min (강승민)

ZnO film growth on sapphire substrate by RF magnetron sputtering

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2004, 14(5), pp.215-219
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Kang, Seung-Min ¹

¹한서대학교

Accredited

ABSTRACT

ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 mm/hr and the substrate temperature of 600oC. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

KEYWORDS

ZnO, Epitaxial films, RF magnetron sputtering, Single crystalline phase

Citation status

* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19