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ZnO film growth on sapphire substrate by RF magnetron sputtering

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2004, 14(5), pp.215~219
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Seung-min Kang 1

1한서대학교

Accredited

ABSTRACT

ZnO epitaxial films have been grown on a (0001)sapphire substrate by RF magnetron sputtering. The single crystalline ZnO films were grown at the condition of growth rate of about 0.1~0.2 mm/hr and the substrate temperature of 600oC. The film thickness was about 400~500 nm. The thin film quality and micro-structure have been evaluated by XRD and TEM observation.

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