@article{ART001112839},
author={Cho, Hyun},
title={High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={6},
pages={234-238}
TY - JOUR
AU - Cho, Hyun
TI - High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 6
PB - The Korea Association Of Crystal Growth, Inc.
SP - 234
EP - 238
SN - 1225-1429
AB - Effects of plasma composition, ion flux and ion energy on the etch rate, surface morphology and near surface stoichiometry of a single crystalline La3Ga5SiO14 wafer have been examined in Cl2/Ar inductively coupled plasma (ICP) discharges. Maximum etch rate ~1600 ?min was achieved either at relatively high source power (~1000 W) or high Cl2 content conditions in Cl2/Ar discharges. The etched surfaces showed similar or better RMS roughness values than those of the unetched control sample and the near surface stoichiometry was found not to be affected by ICP etching.
KW - High density plasma;Langasite;SAW filter devices;Cl2/Ar inductively coupled plasma;Chemical mechanical planarization;Dry etching
DO -
UR -
ER -
Cho, Hyun. (2005). High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices. Journal of the Korean Crystal Growth and Crystal Technology, 15(6), 234-238.
Cho, Hyun. 2005, "High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.6 pp.234-238.
Cho, Hyun "High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices" Journal of the Korean Crystal Growth and Crystal Technology 15.6 pp.234-238 (2005) : 234.
Cho, Hyun. High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices. 2005; 15(6), 234-238.
Cho, Hyun. "High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices" Journal of the Korean Crystal Growth and Crystal Technology 15, no.6 (2005) : 234-238.
Cho, Hyun. High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices. Journal of the Korean Crystal Growth and Crystal Technology, 15(6), 234-238.
Cho, Hyun. High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(6) 234-238.
Cho, Hyun. High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices. 2005; 15(6), 234-238.
Cho, Hyun. "High density plasma etching of single crystalline La3Ga5SiO14 for wide band, high temperature SAWfilter devices" Journal of the Korean Crystal Growth and Crystal Technology 15, no.6 (2005) : 234-238.
