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Electrical and optical properties of Al and F doped ZnO transparent conducting film by sol-gel method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2006, 16(2), pp.59-65
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

이승엽 1 Park,Byung-Ok 1 Minjae Lee 1

1경북대학교

Accredited

ABSTRACT

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method.These films showed c-axis orientation in comon, but diferent I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration,effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, 2.9 × 102Ωcm at Al 1 at% and 3.3 × 101 Ωcm at F 3 at%. Moreover, compared with ZnO : Al films, ZnO : F films have lowercarier concentration (ZnO : Al 4.8 × 1018 cm3, ZnO : F 3.9 × 1016 cm3) and higher mobility (ZnO : Al 45 cm2/Vs, ZnO : F495 cm2/Vs). For average optical transmittances, ZnO : Al thin films have 86~90 % and ZnO : F films have 77~85 %comparatively low.Key words Sol-gel.. .. Al. F. ... ZnO ...... .. . ... ....... ..... ...†..... ....... , .. , 702-701(2005. 12. 26. .. )(2006. 1. 13. .... ). . Al. ... ZnO(ZnO : Al) ... F. ... ZnO(ZnO : F) ... sol-gel .. .... glass .... ..... . ..... (002).. c-. .... .... . FWHM(full width at half-maximum) ..

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