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Utilization of the surface damage as gettering sink in the silicon wafers useful for the solar cell fabrication

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2006, 16(2), pp.66-70
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

KIM YOUNG KWAN 1 김대일 1

1인천대학교

Accredited

ABSTRACT

Various kind of structural defects are observed to be present on the oxidized surface of the silicon crystal whichwas previously damaged mechanicaly. The formation of such defects was found to depend on the amount of damageinduced and the temperature of thermal oxidation. It was confirmed by the measurement of minority carrier life time thatof damage or lower oxidation temperature believed to has higher capability of getering over defects like dislocation lopsor stacking faults.Key words Defects, Strained layer, Silicon crystal, Gettering

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