@article{ART001199743},
author={Cho, Hyun},
title={Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2005},
volume={15},
number={1},
pages={34-38}
TY - JOUR
AU - Cho, Hyun
TI - Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2005
VL - 15
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 34
EP - 38
SN - 1225-1429
AB - Effects of pH level and slurry particle size on material removal rate and planarization of langasite single crystal wafer have been examined. Higher material removal rate was obtained with lower pH level slurries while the planarization was found to be determined by average particle size of colloidal silica slurries. Slurries containing 0.045 mm amorphous silica particles showed the best polishing effect without any scratches on the surface. Effective particle number has a strong effect on the surface planarization and the removal rate, so that the lower effective particle numbers produced low removal rate but the better planarization results.
KW - Langasite wafer;Chemical mechanical planarization;Colloidal silica slurry;pH level;Slurry particle size;Material removal rate;Planarization effect
DO -
UR -
ER -
Cho, Hyun. (2005). Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer. Journal of the Korean Crystal Growth and Crystal Technology, 15(1), 34-38.
Cho, Hyun. 2005, "Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer", Journal of the Korean Crystal Growth and Crystal Technology, vol.15, no.1 pp.34-38.
Cho, Hyun "Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer" Journal of the Korean Crystal Growth and Crystal Technology 15.1 pp.34-38 (2005) : 34.
Cho, Hyun. Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer. 2005; 15(1), 34-38.
Cho, Hyun. "Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer" Journal of the Korean Crystal Growth and Crystal Technology 15, no.1 (2005) : 34-38.
Cho, Hyun. Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer. Journal of the Korean Crystal Growth and Crystal Technology, 15(1), 34-38.
Cho, Hyun. Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer. Journal of the Korean Crystal Growth and Crystal Technology. 2005; 15(1) 34-38.
Cho, Hyun. Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer. 2005; 15(1), 34-38.
Cho, Hyun. "Effects of pH level and slurry particle size on the chemical mechanical planarization of langasitecrystal wafer" Journal of the Korean Crystal Growth and Crystal Technology 15, no.1 (2005) : 34-38.
