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Characterization of transparent ATO conducting films prepared by RF magnetron sputtering

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2008, 18(2), pp.76~80
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Sungwook Lee 1,  HONG, BYUNGYOU 1,  Yong-Seob Park ORD ID 2

1성균관대학교
2서남대학교

Accredited

ABSTRACT

In this study, we synthesized ATO films using RF magnetron sputtering method consisted of SnO₂target added Sb of 6 wt% and investigated the effect of O₂on structural, electrical, and optical properties of ATO films. As a result, in case of O₂/Ar ratio of 0.11, we obtained ATO films exhibit the properties such as the resistivity about 8 × 10-³ [Ω-cm], the transmittance of 85.17 %, and retile structure.

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