Effect of asymmetric magnetic fields on the interface shape in Czochralski silicon crystals

홍영호; Kwang Bo Shim (심광보)

Effect of asymmetric magnetic fields on the interface shape in Czochralski silicon crystals

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2008, 18(4), pp.140-145
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

홍영호 ¹, Kwang Bo Shim ²

¹LG실트론
²한양대학교

Accredited

ABSTRACT

Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

KEYWORDS

Interface shape, Zero Gauss plane, Shape of zero Gauss plane, Magnetic intensity, Czochralski method

Citation status

* References for papers published after 2023 are currently being built.

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