Electrical and optical properties of doped indium tin oxide thin films for top emission organic light emission devices (Top emission 유기발광소자 적용을 위한 도핑된 indium tin oxide 박막의 전기 적 광학적 특성 연구)

정철호; 강용규; YOON, DAEHO (윤대호)

Electrical and optical properties of doped indium tin oxide thin films for top emission organic light emission devices

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2008, 18(4), pp.160-164
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

정철호 ¹, 강용규 ¹, YOON, DAEHO ¹

¹성균관대학교

Accredited

ABSTRACT

Insulating and conducting 12CaO·7Al2O3 (C12A7)-doped indium tin oxide (ITO) (ITO:C12A7 insulator and electride) thin films were deposited on glass substrates by an RF magnetron co-sputtering method with increasing number of insulating and conducting C12A7 target chips. The structural, electrical and optical properties of these films were investigated. The carrier concentration decreased and resistivity increased in the films with increasing number of C12A7 target chips. The optical transmittance of all of the thin films was above 80 % in the visible wavelength range. The structural property and surface roughness of the films were examined and the decrease of crystallinity and surface roughness was strongly dependent on the change of grain size.

KEYWORDS

12CaO·7Al2O3, Top emission organic light emission devices, Indium tin oxide

Citation status

* References for papers published after 2023 are currently being built.

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