@article{ART001287610},
author={심지명 and KIM YOUNG KWAN},
title={The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2008},
volume={18},
number={5},
pages={179-183}
TY - JOUR
AU - 심지명
AU - KIM YOUNG KWAN
TI - The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2008
VL - 18
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 179
EP - 183
SN - 1225-1429
AB - Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell. Heat treatment at 850℃ produces the highest Voc
among various heat treatment conditions. Heat treatment at the temperatures higher than 850℃ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.
KW - n-Type silicon solar cell;Al-emitter;Heat treatment;Screen printing
DO -
UR -
ER -
심지명 and KIM YOUNG KWAN. (2008). The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell. Journal of the Korean Crystal Growth and Crystal Technology, 18(5), 179-183.
심지명 and KIM YOUNG KWAN. 2008, "The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell", Journal of the Korean Crystal Growth and Crystal Technology, vol.18, no.5 pp.179-183.
심지명, KIM YOUNG KWAN "The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell" Journal of the Korean Crystal Growth and Crystal Technology 18.5 pp.179-183 (2008) : 179.
심지명, KIM YOUNG KWAN. The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell. 2008; 18(5), 179-183.
심지명 and KIM YOUNG KWAN. "The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell" Journal of the Korean Crystal Growth and Crystal Technology 18, no.5 (2008) : 179-183.
심지명; KIM YOUNG KWAN. The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell. Journal of the Korean Crystal Growth and Crystal Technology, 18(5), 179-183.
심지명; KIM YOUNG KWAN. The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell. Journal of the Korean Crystal Growth and Crystal Technology. 2008; 18(5) 179-183.
심지명, KIM YOUNG KWAN. The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell. 2008; 18(5), 179-183.
심지명 and KIM YOUNG KWAN. "The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell" Journal of the Korean Crystal Growth and Crystal Technology 18, no.5 (2008) : 179-183.
