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Microstructure and thermal conductivity of AlN ceramics with Y2O3 fabricated by pressureless sintering

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2009, 19(1), pp.33-38
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

채재홍 1 박주석 1 안종필 1 김경훈 1

1요업기술원

Accredited

ABSTRACT

The effect of Y2O3 as a sintering additive on thermal conductivity and microstructure of pressureless sintered AlN ceramics was investigated at sintering temperature range from 1,700 to 1,900oC. Y2O3 added AlN specimens showed higher densification rate than pure AlN because of the formation of the yttrium aluminates secondary phase by reaction of Y2O3 and Al2O3 of AlN surface. The thermal conductivity of AlN specimens was promoted by the addition of Y2O3 in spite of the formation of secondary phase in AlN grain boundaries and grain boundary triple junction, because Y2O3 addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. The thermal conductivity of AlN specimens was promoted by increasing sintering time because the increases of average grain size and the elimination of secondary phases from the grain boundary due to the evaporation. Particularly, the thermal conductivity of AlN specimen sintered at 1,900oC for 5 hours improved over 20 %, 141Wm−1K−1, compared with the specimen sintered at 1,900oC for 1 hour.

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