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Growth and optical characteristics of the non-phosphor white LED by mixed-source HVPE

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2009, 19(2), pp.61-65
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Eunju Kim 1 Hunsoo Jeon 1 홍상현 1 한영훈 1 이아름 1 Kyoung Hwa Kim 1 Min Yang 1 하홍주 1 Hyung Soo Ahn 1 Cho, Chae-Ryong 2 Suck-Whan Kim 3 SUNLYEONG HWANG 4

1한국해양대학교
2부산대학교
3안동대학교
4삼성전자

Accredited

ABSTRACT

In this paper, we report on the growth and optical characteristics of white-LED without fluorescent material. The growth of DH (double heterostructure) with AlGaN active layer was performed on a n-GaN/(0001) Al2O3 by the mixedsource HVPE and multi-sliding boat. The CRI (color rendering index) of packaging device charged in the range 72-93 with CIE chromaticity coordinates (x = 0.26~0.34, y = 0.31~0.40). And CCT (correlated color temperature) values was measured 5126~10406 K with increasing injection current. The CIE point of conventional phosphor white LED shifts blue region, but CIE point of non-phosphor white LED shifts opposite direction. These results show the mixed-source HVPE can be possible to newly fabricate method of phosphor free white LED with high CRI value.

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