A study on the growth morphology of AlN crystals grown by a sublimation process (승화법으로 성장된 AlN 결정의 성장 양상에 관한 연구)

Seung-min Kang (강승민)

A study on the growth morphology of AlN crystals grown by a sublimation process

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2009, 19(5), pp.242~245
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Seung-min Kang ¹

¹한서대학교

Accredited

ABSTRACT

AlN crystals were grown by a sublimation process without seed crystals and the growth morphology of them was characterized. The grown AlN crystals were a polycrystalline phase, which had a diameter of 60~200 μm and were grown with a growth rate of 0.2~0.5 μm/hr. It was observed that the as-grown crystals had a hexagonal crystal structure and revealed that these crystals were grown with a morphology of columnar morphology in the initial stage of the growth before they were enlarged in a way of a lateral growth behavior in the final stage. On the surface, a lot of pinholes were observed on the surface of crystals grown. The evolution of a growth morphology was characterized by optical and scanning electron microscopic observation

KEYWORDS

AlN crystals, Growth morphology, Columnar crystal growth, Nucleation layer, Sublimation

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[book] L.M. Levinson / 1988 / Electronic ceramics properties, Devices and Applications / Marcel Dekker Inc. : 45~

[book] A.J. Moulson / 1991 / Electroceramics-material, properties, application : 223~

[journal] G.A. Slack / 1976 / Growth of high purity AlN crystals / J. of Crystal Growth 34 : 263~

[journal] G.A. Slack / 1977 / AlN single crystals / J. of Crystal Growth 42 : 560~

[journal] Y. Shi / 2001 / New technique for sublimation growth of AlN single crystals / MRS Internet J. Nitride Semicond. Res. 6 : 5~

[journal] M. Bickermann / 2003 / PVT growth of bulk AlN crystals with low oxygen contamination / Phys. Stat. Sol. (c) : 1993~

[journal] M. Bickermann / 2004 / Characterization of bulk AlN with low oxygen content / J. of Crystal Growth 263 : 432~

[journal] B.M. Epelbaum / 2004 / Characterization of bulk AlN with low oxygen content / J. of Crystal Growth 265 : 577~

[journal] 강승민 / 2008 / Growth of AlN crystals by the sublimation process / 한국결정성장학회지 / 한국결정성장학회 18(2) : 68~71

[journal] S.M. Kang / 1999 / Step growth and defects formation on growth interface for SiC sublimation growth / J. of Kor. Cryst. Growth and Cryst. Tech. 9 : 558~

[journal] S.M. Kang / 2001 / The study on the formation of growth steps in the sublimation growth of SiC single crystals / J. of Kor. Cryst. Growth and Cryst. Tech. 11 : 1~

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