Characterizations of CuInGaSe(CIGS) mixed-source and the thin film (CuInGaSe(CIGS) 혼합 소스의 제작과 특성)

이아름; Hunsoo Jeon (전헌수); Gang Seok Lee (이강석); 옥진은; 조동완; Kyoung Hwa Kim (김경화); Min Yang (양민); 이삼녕; Hyung Soo Ahn (안형수); Cho， Chae-Ryong (조채용); SOHN Sang Ho (손상호); Hong Ju Ha (하홍주)

Characterizations of CuInGaSe(CIGS) mixed-source and the thin film

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2010, 20(1), pp.1-6
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

이아름 ¹, Hunsoo Jeon ¹, Gang Seok Lee ¹, 옥진은 ¹, 조동완 ¹, Kyoung Hwa Kim ¹, Min Yang ¹, 이삼녕 ¹, Hyung Soo Ahn ¹, Cho， Chae-Ryong ², SOHN Sang Ho ³, Hong Ju Ha ⁴

¹한국해양대학교
²부산대학교
³경북대학교
⁴시스솔루션

Accredited

ABSTRACT

CuInGaSe(CIGS) mixed-source was prepared by hydride vapor phase epitaxy (HVPE). Each metal was mixed in regular ratio and soaked at 1090oC for 90 minutes in nitrogen atmosphere. After making the mixed-source to powder state,the pellet was made by the powder. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass evaporated Mo layer by e-beam evaporator. To confirm the crystallization, we measured X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312) and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

KEYWORDS

CIGS, Mixed-source, Selenization, XRD, HVPE, Pellet

Citation status

* References for papers published after 2023 are currently being built.

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