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@article{ART001472750},
author={오동근 and Bonggeun Choi and 방신영 and 은종원 and 정준호 and 이성국 and 정진현 and Kwang Bo Shim},
title={Fabrication and characterization of GaN substrate by HVPE},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2010},
volume={20},
number={4},
pages={164-167}

TY - JOUR
AU - 오동근
AU - Bonggeun Choi
AU - 방신영
AU - 은종원
AU - 정준호
AU - 이성국
AU - 정진현
AU - Kwang Bo Shim
TI - Fabrication and characterization of GaN substrate by HVPE
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2010
VL - 20
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 164
EP - 167
SN - 1225-1429
AB - Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE)technique. Free-standing GaN substrates of 10 × 10, 15 × 15 mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in 200oC H3PO4 at 5 minutes. The defect density calculated from observed etch-pits on surface was around 5 × 106/cm 2. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.
KW - Bulk GaN;HVPE;FWHM;Etch-pit;LED;LD
DO -
UR -
ER -

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현 and Kwang Bo Shim. (2010). Fabrication and characterization of GaN substrate by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 20(4), 164-167.

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현 and Kwang Bo Shim. 2010, "Fabrication and characterization of GaN substrate by HVPE", Journal of the Korean Crystal Growth and Crystal Technology, vol.20, no.4 pp.164-167.

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현, Kwang Bo Shim "Fabrication and characterization of GaN substrate by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 20.4 pp.164-167 (2010) : 164.

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현, Kwang Bo Shim. Fabrication and characterization of GaN substrate by HVPE. 2010; 20(4), 164-167.

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현 and Kwang Bo Shim. "Fabrication and characterization of GaN substrate by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 20, no.4 (2010) : 164-167.

오동근; Bonggeun Choi; 방신영; 은종원; 정준호; 이성국; 정진현; Kwang Bo Shim. Fabrication and characterization of GaN substrate by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 20(4), 164-167.

오동근; Bonggeun Choi; 방신영; 은종원; 정준호; 이성국; 정진현; Kwang Bo Shim. Fabrication and characterization of GaN substrate by HVPE. Journal of the Korean Crystal Growth and Crystal Technology. 2010; 20(4) 164-167.

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현, Kwang Bo Shim. Fabrication and characterization of GaN substrate by HVPE. 2010; 20(4), 164-167.

오동근, Bonggeun Choi, 방신영, 은종원, 정준호, 이성국, 정진현 and Kwang Bo Shim. "Fabrication and characterization of GaN substrate by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 20, no.4 (2010) : 164-167.