Growth parameters and formation of slip plane in ZnWO4 single crystals by the Czochralski method

Chang Sung Lim (임창성)

Growth parameters and formation of slip plane in ZnWO4 single crystals by the Czochralski method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2010, 20(5), pp.202-206
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Chang Sung Lim ¹

¹한서대학교

Accredited

ABSTRACT

Single crystals of ZnWO4 were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in ZnWO4 crystals were studied. ZnWO4crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

KEYWORDS

Growth parameters, Slip plane, ZnWO4, Czochralski method

Citation status

* References for papers published after 2023 are currently being built.

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This paper was written with support from the National Research Foundation of Korea.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19