Molecular dynamic studies for elastic constant of SiC crystal at high temperature (고온에서 SiC 결정의 탄성율에 대한 분자동역학연구)

박병우; Ho-Yong Shin (신호용); Jong Ho Kim (김종호); Jong In Im (임종인)

Molecular dynamic studies for elastic constant of SiC crystal at high temperature

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2010, 20(5), pp.232-236
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

박병우 ¹, Ho-Yong Shin ², Jong Ho Kim ², Jong In Im ¹

¹한국세라믹기술원
²한국세라믹기술원 기업지원본부 시뮬레이션

Accredited

ABSTRACT

Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff’s potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over 1,000oC. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to 1,250oC.

KEYWORDS

Silicon carbide (SiC), Molecular dynamics simulations, Stress-strain characteristics, Elastic constants

Citation status

* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19