@article{ART001597937},
author={Sujin Lim and Hoyong Shin and Jong-Ho Kim and Jong In Im},
title={Finite element analysis for czochralski growth process of sapphire single crystal},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2011},
volume={21},
number={5},
pages={193-198}
TY - JOUR
AU - Sujin Lim
AU - Hoyong Shin
AU - Jong-Ho Kim
AU - Jong In Im
TI - Finite element analysis for czochralski growth process of sapphire single crystal
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2011
VL - 21
IS - 5
PB - The Korea Association Of Crystal Growth, Inc.
SP - 193
EP - 198
SN - 1225-1429
AB - Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method.
The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystalmelt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.
KW - Sapphire;Czochralski process;FEM;Crystal-melt interface;rpm;Shoulder
DO -
UR -
ER -
Sujin Lim, Hoyong Shin, Jong-Ho Kim and Jong In Im. (2011). Finite element analysis for czochralski growth process of sapphire single crystal. Journal of the Korean Crystal Growth and Crystal Technology, 21(5), 193-198.
Sujin Lim, Hoyong Shin, Jong-Ho Kim and Jong In Im. 2011, "Finite element analysis for czochralski growth process of sapphire single crystal", Journal of the Korean Crystal Growth and Crystal Technology, vol.21, no.5 pp.193-198.
Sujin Lim, Hoyong Shin, Jong-Ho Kim, Jong In Im "Finite element analysis for czochralski growth process of sapphire single crystal" Journal of the Korean Crystal Growth and Crystal Technology 21.5 pp.193-198 (2011) : 193.
Sujin Lim, Hoyong Shin, Jong-Ho Kim, Jong In Im. Finite element analysis for czochralski growth process of sapphire single crystal. 2011; 21(5), 193-198.
Sujin Lim, Hoyong Shin, Jong-Ho Kim and Jong In Im. "Finite element analysis for czochralski growth process of sapphire single crystal" Journal of the Korean Crystal Growth and Crystal Technology 21, no.5 (2011) : 193-198.
Sujin Lim; Hoyong Shin; Jong-Ho Kim; Jong In Im. Finite element analysis for czochralski growth process of sapphire single crystal. Journal of the Korean Crystal Growth and Crystal Technology, 21(5), 193-198.
Sujin Lim; Hoyong Shin; Jong-Ho Kim; Jong In Im. Finite element analysis for czochralski growth process of sapphire single crystal. Journal of the Korean Crystal Growth and Crystal Technology. 2011; 21(5) 193-198.
Sujin Lim, Hoyong Shin, Jong-Ho Kim, Jong In Im. Finite element analysis for czochralski growth process of sapphire single crystal. 2011; 21(5), 193-198.
Sujin Lim, Hoyong Shin, Jong-Ho Kim and Jong In Im. "Finite element analysis for czochralski growth process of sapphire single crystal" Journal of the Korean Crystal Growth and Crystal Technology 21, no.5 (2011) : 193-198.
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