@article{ART001763096},
author={김기현 and Park,Byung-Ok},
title={Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2013},
volume={23},
number={2},
pages={108-113},
doi={10.6111/JKCGCT.2013.23.2.108}
TY - JOUR
AU - 김기현
AU - Park,Byung-Ok
TI - Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2013
VL - 23
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 108
EP - 113
SN - 1225-1429
AB - Chalcopyrite material CuInSe2 (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite CuInSe2 thin films were successfully made after selenization at the substrate temperature of 550oC in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 mA/cm2 FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.
KW - CuInSe2;CIS Nanoparticles;CIS Absorber layer;Cryogenic milling;Non-vacuum process.
DO - 10.6111/JKCGCT.2013.23.2.108
ER -
김기현 and Park,Byung-Ok. (2013). Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling. Journal of the Korean Crystal Growth and Crystal Technology, 23(2), 108-113.
김기현 and Park,Byung-Ok. 2013, "Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling", Journal of the Korean Crystal Growth and Crystal Technology, vol.23, no.2 pp.108-113. Available from: doi:10.6111/JKCGCT.2013.23.2.108
김기현, Park,Byung-Ok "Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling" Journal of the Korean Crystal Growth and Crystal Technology 23.2 pp.108-113 (2013) : 108.
김기현, Park,Byung-Ok. Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling. 2013; 23(2), 108-113. Available from: doi:10.6111/JKCGCT.2013.23.2.108
김기현 and Park,Byung-Ok. "Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling" Journal of the Korean Crystal Growth and Crystal Technology 23, no.2 (2013) : 108-113.doi: 10.6111/JKCGCT.2013.23.2.108
김기현; Park,Byung-Ok. Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling. Journal of the Korean Crystal Growth and Crystal Technology, 23(2), 108-113. doi: 10.6111/JKCGCT.2013.23.2.108
김기현; Park,Byung-Ok. Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling. Journal of the Korean Crystal Growth and Crystal Technology. 2013; 23(2) 108-113. doi: 10.6111/JKCGCT.2013.23.2.108
김기현, Park,Byung-Ok. Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling. 2013; 23(2), 108-113. Available from: doi:10.6111/JKCGCT.2013.23.2.108
김기현 and Park,Byung-Ok. "Preparation of nanoparticles CuInSe2 absorber layer by a non-vacuum process of low cost cryogenic milling" Journal of the Korean Crystal Growth and Crystal Technology 23, no.2 (2013) : 108-113.doi: 10.6111/JKCGCT.2013.23.2.108
