Effect of metal buffer layers on the growth of GaN on Si substrates (실리콘 기판위에 금속 완충층을 이용한 GaN 성장과 특성분석)

Jun Hyeong Lee (이준형); 유연수; Hyung Soo Ahn (안형수); Young-Moon Yu (유영문); Min Yang (양민)

doi:10.6111/JKCGCT.2013.23.4.161

Effect of metal buffer layers on the growth of GaN on Si substrates

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2013, 23(4), pp.161-166
DOI : 10.6111/JKCGCT.2013.23.4.161
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Jun Hyeong Lee ¹, 유연수 ¹, Hyung Soo Ahn ¹, Young-Moon Yu ², Min Yang ¹

¹한국해양대학교
²부경대학교

Accredited

ABSTRACT

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.

KEYWORDS

GaN, Buffer layer, AlN buffer layer, Si, Melt-back etching, Metal buffer layer, MOCVD

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* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of metal buffer layers on the growth of GaN on Si substrates

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of metal buffer layers on the growth of GaN on Si substrates

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