The growth of GaN on the metallic compound graphite substrate by HVPE (HVPE 방법에 의한 금속 화합물 탄소체 기판 위의 GaN 성장)

김지영; Gang Seok Lee (이강석); 박민아; 신민정; Sam Nyung Yi (이삼녕); Min Yang (양민); Hyung Soo Ahn (안형수); Young-Moon Yu (유영문); Kim Suck Whan (김석환); 이효석; 강희신; 전헌수; Nobuhiko Sawak

doi:10.6111/JKCGCT.2013.23.5.213

The growth of GaN on the metallic compound graphite substrate by HVPE

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2013, 23(5), pp.213~217
DOI : 10.6111/JKCGCT.2013.23.5.213
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

김지영 ¹, Gang Seok Lee ¹, 박민아 ¹, 신민정 ¹, Sam Nyung Yi ¹, Min Yang ¹, Hyung Soo Ahn ¹, Young-Moon Yu ², Kim Suck Whan ³, 이효석 ⁴, 강희신 ⁵, 전헌수 ⁶, Nobuhiko Sawak ⁷

¹한국해양대학교
²부경대학교
³안동대학교
⁴L&L.Co., Ltd
⁵CSsol.Co., Ltd
⁶나고야대학교
⁷AIT

Accredited

ABSTRACT

The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and NH3 gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at 850oC and 1090oC, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

KEYWORDS

GaN, Graphite, HVPE, EDS, SEM, XRD

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[journal] V. Adivarahan / 2002 / Submilliwatt power III-N light emitting diodes at 285 nm / Jpn. J. Appl. Phys 41 : 435~

[journal] T.G. Zhu / 2003 / AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition / J. Cryst. Growth 248 : 548~

[journal] T. Nishida / 2001 / Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN / Appl. Phys. Lett 79 : 711~

[journal] H.M. Kim / 2000 / Cathodoluminescence characterization of GaN thick films grown by using the HVPE method / J. Korean Phys. Soc 37 : 956~

[journal] Y.J. Yu / 2001 / Optical investigation of InGaN/GaN quantum well structures with various barrier widths / J. Korean Phys 28 : 134~

[journal] B. Luo / 2002 / Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions / Solid-State Electron 46 : 1345~

[journal] F. Yun / 2000 / Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy / Solid-State Electron 44 : 2225~

[journal] T. Ueda / 2003 / Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer / Appl. Surf. Sci 216 : 512~

[journal] A. Koukitu / 2007 / HVPE growth of AlxGa1 − xN ternary alloy using AlCl3 and GaCl / J. Cryst. Growth 305 : 335~

[journal] S.N. Lee / 2006 / Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate / Physica B (376-377) : 532~

[journal] K. Kawasaki / 2006 / Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique / Appl. Phys. Lett 89 : 261114~

[journal] 강진기 / 2011 / Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar a-plane GaN / 한국결정성장학회지 / 한국결정성장학회 21(5) : 187~192

[journal] 오동근 / 2012 / Surface morphology variation during wet etching of GaN epilayer grown by HVPE / 한국결정성장학회지 / 한국결정성장학회 22(6) : 261~264

[journal] H.H. Wu / 2012 / A study on the heat dissipation of high power multi-chip COB LEDs / Microelectr. J 43 : 280~

[journal] H.H. Cheng / 2012 / Heat dissipation design and analysis of high power LED array using the finite element method / Microelectron. Reliab 52 : 905~

This paper was written with support from the National Research Foundation of Korea.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

The growth of GaN on the metallic compound graphite substrate by HVPE

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

The growth of GaN on the metallic compound graphite substrate by HVPE

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