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Synthesis of high purity carbon powders using inductively thermal plasma

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2013, 23(6), pp.309-313
  • DOI : 10.6111/JKCGCT.2013.23.6.309
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김경인 1 Han Kyu Sung 1 Kwangtaek Hwang 1 Kim Jinho 1

1한국세라믹기술원

Accredited

ABSTRACT

Silicon carbide (SiC) has recently drawn an enormous industrial interest because of its useful mechanical properties such as thermal resistance, abrasion resistance and thermal conductivity at high temperature. Especially, high purity SiC is applicable to the fields of power semiconductor and lighting emitting diode (LED). In this work, high purity carbon powders as raw material for high purity SiC were prepared by a RF induction thermal plasma. Dodecane (C12H26)as hydrocarbon liquid precursor has been utilized for synthesis of high purity carbon powders. It is found that the filtercollected carbon powders showed smaller particle size (10~20 nm) and low crystallinity compared to the reactor-collected carbon powders. The purities of reactor-collected and filter-collected carbon powders were 99.9997 % (5N7) and 99.9993 %(5N3), respectively. In addition, the impurities of carbon powders synthesized by RF induction thermal plasma were mainly originated from the surrounding environment.

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