Synthesis of Ga2O3 powders by precipitation method (침전법을 이용한 Ga2O3 분말의 합성)

정종열; Sang-Hun Kim (김상훈); Eun-Tae Kang (강은태); Kim Jinho (김진호); Han Kyu Sung (한규성); Kwangtaek Hwang (황광택); Wooseok Cho (조우석)

doi:10.6111/JKCGCT.2014.24.1.008

Synthesis of Ga2O3 powders by precipitation method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2014, 24(1), pp.8~14
DOI : 10.6111/JKCGCT.2014.24.1.008
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

정종열 ¹, Sang-Hun Kim ¹, Eun-Tae Kang ², Kim Jinho ¹, Han Kyu Sung ¹, Kwangtaek Hwang ¹, Wooseok Cho ¹

¹한국세라믹기술원
²경상대학교

Accredited

ABSTRACT

In this study, we investigated synthesis and characteristics of gallium oxide (Ga2O3) powders prepared byprecipitation method. Ga2O3 powders were synthesized using Ga(NO3)3 as a starting material and NH4OH as a precipitant. The oxidation temperature of Ga(OH)3 and phase transition temperature of Ga2O3 was revealed using TG-DSC analysis. The crystal structural change of Ga2O3 powders was investigated by XRD analysis. The morphologies and size distributionsof Ga2O3 particles were analyzed using SEM.

KEYWORDS

Precipitation, Gallium oxide, Aging, InGaZnO

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