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Synthesis of Ga2O3 powders by precipitation method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2014, 24(1), pp.8-14
  • DOI : 10.6111/JKCGCT.2014.24.1.008
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

정종열 1 Sang-Hun Kim 1 Eun-Tae Kang 2 Kim Jinho 1 Han Kyu Sung 1 Kwangtaek Hwang 1 Wooseok Cho 1

1한국세라믹기술원
2경상대학교

Accredited

ABSTRACT

In this study, we investigated synthesis and characteristics of gallium oxide (Ga2O3) powders prepared byprecipitation method. Ga2O3 powders were synthesized using Ga(NO3)3 as a starting material and NH4OH as a precipitant. The oxidation temperature of Ga(OH)3 and phase transition temperature of Ga2O3 was revealed using TG-DSC analysis. The crystal structural change of Ga2O3 powders was investigated by XRD analysis. The morphologies and size distributionsof Ga2O3 particles were analyzed using SEM.

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