본문 바로가기
  • Home

Synthesis of high purity aluminum nitride nanopowder by RF induction thermal plasma

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2014, 24(1), pp.1-7
  • DOI : 10.6111/JKCGCT.2014.24.1.001
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김경인 1 Sungchurl Choi 2 Han Kyu Sung 1 Kwangtaek Hwang 1 Kim Jinho 1

1한국세라믹기술원
2한양대학교

Accredited

ABSTRACT

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity,has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitridehas a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesizehigh-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purityaluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow wascontrolled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitridenanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

Citation status

* References for papers published after 2023 are currently being built.