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@article{ART001851155},
author={Myeong-Il Jeong and Choi Chel Jong},
title={Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={1},
pages={41-45},
doi={10.6111/JKCGCT.2014.24.1.041}

TY - JOUR
AU - Myeong-Il Jeong
AU - Choi Chel Jong
TI - Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 41
EP - 45
SN - 1225-1429
AB - We have investigated the passivation property of SiNx and SiO2 thin films formed using various processconditions for the application of crystalline Si solar cells. An increase in the thickness of SiNx deposited using plasmaenhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated withthe passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The SiO2 thinfilms grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process,implying the dry oxidation process was more effective in the formation of high quality SiO2 thin films. The relativeeffective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivationbehavior could be attributed to the increase in interface trap density caused by thermal damages.
KW - SiNx;SiO2;Passivation;Crystalline Si solar cells;Interface trap density
DO - 10.6111/JKCGCT.2014.24.1.041
ER -

Myeong-Il Jeong and Choi Chel Jong. (2014). Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells. Journal of the Korean Crystal Growth and Crystal Technology, 24(1), 41-45.

Myeong-Il Jeong and Choi Chel Jong. 2014, "Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.1 pp.41-45. Available from: doi:10.6111/JKCGCT.2014.24.1.041

Myeong-Il Jeong, Choi Chel Jong "Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24.1 pp.41-45 (2014) : 41.

Myeong-Il Jeong, Choi Chel Jong. Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells. 2014; 24(1), 41-45. Available from: doi:10.6111/JKCGCT.2014.24.1.041

Myeong-Il Jeong and Choi Chel Jong. "Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24, no.1 (2014) : 41-45.doi: 10.6111/JKCGCT.2014.24.1.041

Myeong-Il Jeong; Choi Chel Jong. Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells. Journal of the Korean Crystal Growth and Crystal Technology, 24(1), 41-45. doi: 10.6111/JKCGCT.2014.24.1.041

Myeong-Il Jeong; Choi Chel Jong. Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(1) 41-45. doi: 10.6111/JKCGCT.2014.24.1.041

Myeong-Il Jeong, Choi Chel Jong. Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells. 2014; 24(1), 41-45. Available from: doi:10.6111/JKCGCT.2014.24.1.041

Myeong-Il Jeong and Choi Chel Jong. "Passivation properties of SiNx and SiO2 thin films for the application of crystalline Si solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24, no.1 (2014) : 41-45.doi: 10.6111/JKCGCT.2014.24.1.041