KJCKorea
Journal Central

@article{ART001870122},
author={A-Young Lee and 이동규 and KIM YOUNG KWAN},
title={The current status in the silicon crystal growth technology for solar cells},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={2},
pages={47-53},
doi={10.6111/JKCGCT.2014.24.2.047}

TY - JOUR
AU - A-Young Lee
AU - 이동규
AU - KIM YOUNG KWAN
TI - The current status in the silicon crystal growth technology for solar cells
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 47
EP - 53
SN - 1225-1429
AB - Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon isthe main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystalinterface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is thecontamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. Andalso, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of theMCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner sidecrucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growingapparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as theoptimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom ofthe crucible would be one of the solutions.
KW - Crystalline silicon solar cell;Single crystalline Si;Multi-crystalline Si;High efficiency;Mono-like Si
DO - 10.6111/JKCGCT.2014.24.2.047
ER -

A-Young Lee, 이동규 and KIM YOUNG KWAN. (2014). The current status in the silicon crystal growth technology for solar cells. Journal of the Korean Crystal Growth and Crystal Technology, 24(2), 47-53.

A-Young Lee, 이동규 and KIM YOUNG KWAN. 2014, "The current status in the silicon crystal growth technology for solar cells", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.2 pp.47-53. Available from: doi:10.6111/JKCGCT.2014.24.2.047

A-Young Lee, 이동규, KIM YOUNG KWAN "The current status in the silicon crystal growth technology for solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24.2 pp.47-53 (2014) : 47.

A-Young Lee, 이동규, KIM YOUNG KWAN. The current status in the silicon crystal growth technology for solar cells. 2014; 24(2), 47-53. Available from: doi:10.6111/JKCGCT.2014.24.2.047

A-Young Lee, 이동규 and KIM YOUNG KWAN. "The current status in the silicon crystal growth technology for solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24, no.2 (2014) : 47-53.doi: 10.6111/JKCGCT.2014.24.2.047

A-Young Lee; 이동규; KIM YOUNG KWAN. The current status in the silicon crystal growth technology for solar cells. Journal of the Korean Crystal Growth and Crystal Technology, 24(2), 47-53. doi: 10.6111/JKCGCT.2014.24.2.047

A-Young Lee; 이동규; KIM YOUNG KWAN. The current status in the silicon crystal growth technology for solar cells. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(2) 47-53. doi: 10.6111/JKCGCT.2014.24.2.047

A-Young Lee, 이동규, KIM YOUNG KWAN. The current status in the silicon crystal growth technology for solar cells. 2014; 24(2), 47-53. Available from: doi:10.6111/JKCGCT.2014.24.2.047

A-Young Lee, 이동규 and KIM YOUNG KWAN. "The current status in the silicon crystal growth technology for solar cells" Journal of the Korean Crystal Growth and Crystal Technology 24, no.2 (2014) : 47-53.doi: 10.6111/JKCGCT.2014.24.2.047