@article{ART001885133},
author={하주영 and Mi-Seon Park and Lee, Won Jae and Young Jun Choi and Hae Yong Lee},
title={Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={3},
pages={89-93},
doi={10.6111/JKCGCT.2014.24.3.089}
TY - JOUR
AU - 하주영
AU - Mi-Seon Park
AU - Lee, Won Jae
AU - Young Jun Choi
AU - Hae Yong Lee
TI - Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 89
EP - 93
SN - 1225-1429
AB - In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have beeninvestigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surfaceroughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as theincreasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RCand the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/IIIratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shapedazimuthal dependence over 360oangle range was observed for all samples. At V/III ratio = 10, the difference of FWHM ofa-plane GaN between 0oand 90owas 439 arcsec revealed as the lowest value in the 4 samples.
KW - a-plane GaN;r-plane sapphire;HVPE;Omega scan;AFM
DO - 10.6111/JKCGCT.2014.24.3.089
ER -
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. (2014). Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 24(3), 89-93.
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. 2014, "Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.3 pp.89-93. Available from: doi:10.6111/JKCGCT.2014.24.3.089
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi, Hae Yong Lee "Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 24.3 pp.89-93 (2014) : 89.
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi, Hae Yong Lee. Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE. 2014; 24(3), 89-93. Available from: doi:10.6111/JKCGCT.2014.24.3.089
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. "Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 24, no.3 (2014) : 89-93.doi: 10.6111/JKCGCT.2014.24.3.089
하주영; Mi-Seon Park; Lee, Won Jae; Young Jun Choi; Hae Yong Lee. Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 24(3), 89-93. doi: 10.6111/JKCGCT.2014.24.3.089
하주영; Mi-Seon Park; Lee, Won Jae; Young Jun Choi; Hae Yong Lee. Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(3) 89-93. doi: 10.6111/JKCGCT.2014.24.3.089
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi, Hae Yong Lee. Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE. 2014; 24(3), 89-93. Available from: doi:10.6111/JKCGCT.2014.24.3.089
하주영, Mi-Seon Park, Lee, Won Jae, Young Jun Choi and Hae Yong Lee. "Effects of the V/III ratio on a-plane GaN epitaxial layer on r-plane sapphire grown by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 24, no.3 (2014) : 89-93.doi: 10.6111/JKCGCT.2014.24.3.089
