The molten KOH/NaOH wet chemical etching of HVPE-grown GaN (HVPE로 성장된 GaN의 용융 KOH/NaOH 습식화학에칭)

Jae Hwa Park (박재화); 홍윤표; Cheol Woo Park (박철우); Hyun-Mi Kim (김현미); 오동근; Bonggeun Choi (최봉근); Seong Kuk Lee (이성국); Kwang Bo Shim (심광보)

doi:10.6111/JKCGCT.2014.24.4.135

The molten KOH/NaOH wet chemical etching of HVPE-grown GaN

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2014, 24(4), pp.135-139
DOI : 10.6111/JKCGCT.2014.24.4.135
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Jae Hwa Park ¹, 홍윤표 ¹, Cheol Woo Park ¹, Hyun-Mi Kim ¹, 오동근 ¹, Bonggeun Choi ¹, Seong Kuk Lee ², Kwang Bo Shim ¹

¹한양대학교
²유니모포트론

Accredited

ABSTRACT

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristicswas applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etchingmethod was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may bedue to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a betterefficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-raydiffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied byscanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were wellindependently separated in space and clearly showed their shape, was 410oC and 25 min. The etch pits density obtained bymolten KOH/NaOH wet chemical etching under optimum etching condition was around 2.45 × 106cm−2, which iscommercially an available materials.

KEYWORDS

KOH/NaOH, Etching, GaN, HVPE, Wet etching, Etch pit

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

The molten KOH/NaOH wet chemical etching of HVPE-grown GaN

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

The molten KOH/NaOH wet chemical etching of HVPE-grown GaN

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