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Journal Central

@article{ART001903318},
author={유연수 and Jun Hyeong Lee and Hyung Soo Ahn and Keesam Shin and Yincheng He and Min Yang},
title={Selective growth of GaN nanorods on the top of GaN stripes},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2014},
volume={24},
number={4},
pages={145-150},
doi={10.6111/JKCGCT.2014.24.4.145}

TY - JOUR
AU - 유연수
AU - Jun Hyeong Lee
AU - Hyung Soo Ahn
AU - Keesam Shin
AU - Yincheng He
AU - Min Yang
TI - Selective growth of GaN nanorods on the top of GaN stripes
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2014
VL - 24
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 145
EP - 150
SN - 1225-1429
AB - GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. SiO2mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selectivegrowth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods wasfollowed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorodsdepend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shapewhich have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocationswere rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faultswhich might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorodswere observed in the center area of the GaN nanorods.
KW - GaN;GaN nanorod;GaN stripe;MOVPE;Nanostructure
DO - 10.6111/JKCGCT.2014.24.4.145
ER -

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He and Min Yang. (2014). Selective growth of GaN nanorods on the top of GaN stripes. Journal of the Korean Crystal Growth and Crystal Technology, 24(4), 145-150.

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He and Min Yang. 2014, "Selective growth of GaN nanorods on the top of GaN stripes", Journal of the Korean Crystal Growth and Crystal Technology, vol.24, no.4 pp.145-150. Available from: doi:10.6111/JKCGCT.2014.24.4.145

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He, Min Yang "Selective growth of GaN nanorods on the top of GaN stripes" Journal of the Korean Crystal Growth and Crystal Technology 24.4 pp.145-150 (2014) : 145.

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He, Min Yang. Selective growth of GaN nanorods on the top of GaN stripes. 2014; 24(4), 145-150. Available from: doi:10.6111/JKCGCT.2014.24.4.145

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He and Min Yang. "Selective growth of GaN nanorods on the top of GaN stripes" Journal of the Korean Crystal Growth and Crystal Technology 24, no.4 (2014) : 145-150.doi: 10.6111/JKCGCT.2014.24.4.145

유연수; Jun Hyeong Lee; Hyung Soo Ahn; Keesam Shin; Yincheng He; Min Yang. Selective growth of GaN nanorods on the top of GaN stripes. Journal of the Korean Crystal Growth and Crystal Technology, 24(4), 145-150. doi: 10.6111/JKCGCT.2014.24.4.145

유연수; Jun Hyeong Lee; Hyung Soo Ahn; Keesam Shin; Yincheng He; Min Yang. Selective growth of GaN nanorods on the top of GaN stripes. Journal of the Korean Crystal Growth and Crystal Technology. 2014; 24(4) 145-150. doi: 10.6111/JKCGCT.2014.24.4.145

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He, Min Yang. Selective growth of GaN nanorods on the top of GaN stripes. 2014; 24(4), 145-150. Available from: doi:10.6111/JKCGCT.2014.24.4.145

유연수, Jun Hyeong Lee, Hyung Soo Ahn, Keesam Shin, Yincheng He and Min Yang. "Selective growth of GaN nanorods on the top of GaN stripes" Journal of the Korean Crystal Growth and Crystal Technology 24, no.4 (2014) : 145-150.doi: 10.6111/JKCGCT.2014.24.4.145