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Effects of oxygen partial pressure on the properties of indium tin oxide film on PET substrates by RF magnetron sputtering

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2014, 24(6), pp.252~255
  • DOI : 10.6111/JKCGCT.2014.24.6.252
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

김선태 1,  Taegyu Kim 1,  Hyun Cho 1,  Jin Kon Kim 1

1부산대학교

Accredited

ABSTRACT

Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to 6 × 10−5Pa were prepared ontopolyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and opticalproperties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature ofthe ITO films was dominant at the partial pressure below 1 × 10−5Pa and the degree of crystallinity increased as theoxygen concentration increased further. This structural change comes with the increased carrier concentration and reductionof the electrical resistivity down to 9.8 × 10−4Ω · cm. The average transmittance (at 400~800 nm) of the ITO deposited onthe PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with thepartial pressure of 4 × 10−5Pa. The results show that the choice of optimal oxygen partial pressure can present improvedfilm crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

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