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A study on growing of bulk AlN single crystals grown having a (011) growth face of by PVT method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2015, 25(1), pp.32-34
  • DOI : 10.6111/JKCGCT.2015.25.1.032
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering

Kang, Seung-Min 1

1한서대학교

Accredited

ABSTRACT

AlN Single Crystal were grown by PVT (Physical vapor transport) method on bulk seed. It was performed byhigh-frequency induction-heating coil. AlN source powder was loaded at bottom side of the carbon crucible and the crystalseed was loaded at the upper side of the crucible. The temperature conditions of the growth was varied 2000~2100oC andthe surrounding pressure was 1 × 10−1~200 Torr. And the hot-zone of the heating position was controlled elaboratelyaccording to growth. The 17 mm-diameter, 7 mm-thickness AlN single crystal is obtained for about 600 hours growing. Itwas recognized that the growth direction of as grown crystal was R[011] by the Laue X-Ray camera measurement.

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