Effect of the additive gas on the bonding structure and mechanical properties of the DLC films deposited by RF-PECVD (RF-PECVD법에 의해 증착된 DLC 박막의 결합구조와 기계적 특성에 관한 보조가스의 영향)

Bonggeun Choi (최봉근)

doi:10.6111/JKCGCT.2015.25.4.145

Effect of the additive gas on the bonding structure and mechanical properties of the DLC films deposited by RF-PECVD

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2015, 25(4), pp.145-152
DOI : 10.6111/JKCGCT.2015.25.4.145
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering

Bonggeun Choi ¹

¹한양대학교

Accredited

ABSTRACT

In this work, we were investigated the effect of the additive gases on the relationship between bonding structure and mechanical properties of the deposited films when the DLC films were deposited on Si-wafer by the rf-PECVD method with the addition of small amounts of carbon dioxide and nitrogen to the mixture gas of methane and hydrogen. The deposition rate of the films increased as the rf-power increased, while it decreased with increasing the amount of additive gases. Also, as the carbon dioxide gas increased, the hydrogen content in the films decreased but the sp 3 /sp 2 ratio of the films increased. In case of nitrogen gas, the hydrogen content decreased, however the sp 3 /sp 2 ratio and nitrogen gas flow rate did not show a specific tendency.

KEYWORDS

Diamond-like carbon, PE-CVD, Bonding structure, Mechanical property

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of the additive gas on the bonding structure and mechanical properties of the DLC films deposited by RF-PECVD

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of the additive gas on the bonding structure and mechanical properties of the DLC films deposited by RF-PECVD

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