본문 바로가기
  • Home

Crystal structure investigation of AlN crystal grown on 6H-SiC seed by a physical vapor transport method

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2016, 26(1), pp.49-52
  • DOI : 10.6111/JKCGCT.2016.26.1.049
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : December 7, 2015
  • Accepted : January 4, 2016
  • Published : February 29, 2016

Hee-Won Shin 1 Dong-Hun Lee 1 Hwang-Ju Kim 1 Mi-Seon Park 1 Yeon-Suk Jang 1 Lee, Won Jae 1 Jung- Gon Kim 2 Seongmin Jeong ORD ID 3 Myung-Hyun Lee 3 Won-Seon Seo 3

1동의대학교
2대구경북과학기술원
3한국세라믹기술원

Accredited

ABSTRACT

The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

Citation status

* References for papers published after 2023 are currently being built.