@article{ART002101623},
author={Gyong-Phil Yin and Kang, Seung-Min},
title={Dependance of hot-zone position on AlN single crystal growth by PVT method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2016},
volume={26},
number={2},
pages={84-88},
doi={10.6111/JKCGCT.2016.26.2.084}
TY - JOUR
AU - Gyong-Phil Yin
AU - Kang, Seung-Min
TI - Dependance of hot-zone position on AlN single crystal growth by PVT method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2016
VL - 26
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 84
EP - 88
SN - 1225-1429
AB - AlN single crystals were grown by the PVT (Physical vapor transport) method with position-changable induction coil. And the graphite crucible dimensioned Φ90xH120 was used on processing. The temperature was 1950~2050oC and ambient pressure was 150~1 Torr. And the hot-zone was changed according to times on growing for result comparison.
When hot-zone by coil is located below far enough (> 40 mm) from AlN crystal concentration position, the as-grown crystals physical size is better (300 μm/hr) than another condition, but the condition-reproducibility was very poor. However the closer the distance between hot-zone and AlN growing posion, the smaller the size of as-grown crystal and the rarer the generation of the crystal nuclear, but the crystal growing condition is stable for quality. The best condition for both growth rate and quality is gained when the starting position of hot-zone coil is about 20 mm distance from growing position. For the best growth condition, the position of hot-zone is very sensitive factor and the further more the condition of speed of coil shift also must control.
KW - AlN;Single crystal;Hot zone;PVT;Physical vapor transport method;Crystal size
DO - 10.6111/JKCGCT.2016.26.2.084
ER -
Gyong-Phil Yin and Kang, Seung-Min. (2016). Dependance of hot-zone position on AlN single crystal growth by PVT method. Journal of the Korean Crystal Growth and Crystal Technology, 26(2), 84-88.
Gyong-Phil Yin and Kang, Seung-Min. 2016, "Dependance of hot-zone position on AlN single crystal growth by PVT method", Journal of the Korean Crystal Growth and Crystal Technology, vol.26, no.2 pp.84-88. Available from: doi:10.6111/JKCGCT.2016.26.2.084
Gyong-Phil Yin, Kang, Seung-Min "Dependance of hot-zone position on AlN single crystal growth by PVT method" Journal of the Korean Crystal Growth and Crystal Technology 26.2 pp.84-88 (2016) : 84.
Gyong-Phil Yin, Kang, Seung-Min. Dependance of hot-zone position on AlN single crystal growth by PVT method. 2016; 26(2), 84-88. Available from: doi:10.6111/JKCGCT.2016.26.2.084
Gyong-Phil Yin and Kang, Seung-Min. "Dependance of hot-zone position on AlN single crystal growth by PVT method" Journal of the Korean Crystal Growth and Crystal Technology 26, no.2 (2016) : 84-88.doi: 10.6111/JKCGCT.2016.26.2.084
Gyong-Phil Yin; Kang, Seung-Min. Dependance of hot-zone position on AlN single crystal growth by PVT method. Journal of the Korean Crystal Growth and Crystal Technology, 26(2), 84-88. doi: 10.6111/JKCGCT.2016.26.2.084
Gyong-Phil Yin; Kang, Seung-Min. Dependance of hot-zone position on AlN single crystal growth by PVT method. Journal of the Korean Crystal Growth and Crystal Technology. 2016; 26(2) 84-88. doi: 10.6111/JKCGCT.2016.26.2.084
Gyong-Phil Yin, Kang, Seung-Min. Dependance of hot-zone position on AlN single crystal growth by PVT method. 2016; 26(2), 84-88. Available from: doi:10.6111/JKCGCT.2016.26.2.084
Gyong-Phil Yin and Kang, Seung-Min. "Dependance of hot-zone position on AlN single crystal growth by PVT method" Journal of the Korean Crystal Growth and Crystal Technology 26, no.2 (2016) : 84-88.doi: 10.6111/JKCGCT.2016.26.2.084
