Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method (HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구)

Won-Jun Lee (이원준); Mi-Seon Park (박미선); Yeon-Suk Jang (장연숙); Lee, Won Jae (이원재); Ju-Hyung Ha (하주형); Young Jun Choi (최영준); Hae Yong Lee (이혜용); Hong Seung Kim (김홍승)

doi:10.6111/JKCGCT.2016.26.3.089

Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(3), pp.89-94
DOI : 10.6111/JKCGCT.2016.26.3.089
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : April 11, 2016
Accepted : May 13, 2016
Published : June 30, 2016

Won-Jun Lee ¹, Mi-Seon Park ¹, Yeon-Suk Jang ¹, Lee, Won Jae ¹, Ju-Hyung Ha ², Young Jun Choi ², Hae Yong Lee ², Hong Seung Kim ³

¹동의대학교
²(주)루미지엔테크
³한국해양대학교

Accredited

ABSTRACT

In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

KEYWORDS

a-Plane GaN, r-Plane sapphire, HVPE, Azimuth angle, Multi step

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method

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