Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace

Young-Kyu Choi (최영규); Se-Young Jeong (정세영); Bok-Cheol Sim (심복철)

doi:10.6111/JKCGCT.2016.26.3.121

Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2016, 26(3), pp.121-125
DOI : 10.6111/JKCGCT.2016.26.3.121
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : June 3, 2016
Accepted : June 15, 2016
Published : June 30, 2016

Young-Kyu Choi ¹, Se-Young Jeong ², Bok-Cheol Sim ³

¹부산대학교
²LG 실트론
³한양사이버대학교

Accredited

ABSTRACT

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, 100~300 o C. BMD density with hot isostatic pressure treatment (HIP) at temperature of 850 o C is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

KEYWORDS

Bulk micro defect, Denuded zone, Nitrogen ambient furnace, Silicon wafer

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* References for papers published after 2023 are currently being built.

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace

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