@article{ART002136499},
author={Choi ByoungSu and Hae Li Park and Cho, Hyun},
title={Parametric study of inductively coupled plasma etching of GaN epitaxy layer},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2016},
volume={26},
number={4},
pages={145-149},
doi={10.6111/JKCGCT.2016.26.4.145}
TY - JOUR
AU - Choi ByoungSu
AU - Hae Li Park
AU - Cho, Hyun
TI - Parametric study of inductively coupled plasma etching of GaN epitaxy layer
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2016
VL - 26
IS - 4
PB - The Korea Association Of Crystal Growth, Inc.
SP - 145
EP - 149
SN - 1225-1429
AB - The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. Cl2/Ar ICP discharges showed higher etch rates than SF6/Ar discharges because of the higher volatility of GaClx etch products than GaFx compounds. As the Ar ratio increases in the Cl2/Ar ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at 13Cl2/2Ar, 750W ICP power, 400W rf chuck power and 10 mTorr condition.
KW - GaN etching;Inductively coupled plasma;Cl2/Ar and SF6/Ar;Etch rate;Anisotropy
DO - 10.6111/JKCGCT.2016.26.4.145
ER -
Choi ByoungSu, Hae Li Park and Cho, Hyun. (2016). Parametric study of inductively coupled plasma etching of GaN epitaxy layer. Journal of the Korean Crystal Growth and Crystal Technology, 26(4), 145-149.
Choi ByoungSu, Hae Li Park and Cho, Hyun. 2016, "Parametric study of inductively coupled plasma etching of GaN epitaxy layer", Journal of the Korean Crystal Growth and Crystal Technology, vol.26, no.4 pp.145-149. Available from: doi:10.6111/JKCGCT.2016.26.4.145
Choi ByoungSu, Hae Li Park, Cho, Hyun "Parametric study of inductively coupled plasma etching of GaN epitaxy layer" Journal of the Korean Crystal Growth and Crystal Technology 26.4 pp.145-149 (2016) : 145.
Choi ByoungSu, Hae Li Park, Cho, Hyun. Parametric study of inductively coupled plasma etching of GaN epitaxy layer. 2016; 26(4), 145-149. Available from: doi:10.6111/JKCGCT.2016.26.4.145
Choi ByoungSu, Hae Li Park and Cho, Hyun. "Parametric study of inductively coupled plasma etching of GaN epitaxy layer" Journal of the Korean Crystal Growth and Crystal Technology 26, no.4 (2016) : 145-149.doi: 10.6111/JKCGCT.2016.26.4.145
Choi ByoungSu; Hae Li Park; Cho, Hyun. Parametric study of inductively coupled plasma etching of GaN epitaxy layer. Journal of the Korean Crystal Growth and Crystal Technology, 26(4), 145-149. doi: 10.6111/JKCGCT.2016.26.4.145
Choi ByoungSu; Hae Li Park; Cho, Hyun. Parametric study of inductively coupled plasma etching of GaN epitaxy layer. Journal of the Korean Crystal Growth and Crystal Technology. 2016; 26(4) 145-149. doi: 10.6111/JKCGCT.2016.26.4.145
Choi ByoungSu, Hae Li Park, Cho, Hyun. Parametric study of inductively coupled plasma etching of GaN epitaxy layer. 2016; 26(4), 145-149. Available from: doi:10.6111/JKCGCT.2016.26.4.145
Choi ByoungSu, Hae Li Park and Cho, Hyun. "Parametric study of inductively coupled plasma etching of GaN epitaxy layer" Journal of the Korean Crystal Growth and Crystal Technology 26, no.4 (2016) : 145-149.doi: 10.6111/JKCGCT.2016.26.4.145
