Preparation of particle-size-controlled SiC powder for single-crystal growth

Eunjin Jung (정은진); Myung-Hyun Lee (이명현); Yong Jin Kwon (권용진); Doojin Choi (최두진); Kang, Seung-Min (강승민); Younghee Kim (김영희)

doi:10.6111/JKCGCT.2017.27.1.057

Preparation of particle-size-controlled SiC powder for single-crystal growth

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2017, 27(1), pp.57-63
DOI : 10.6111/JKCGCT.2017.27.1.057
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : December 5, 2016
Accepted : January 13, 2017
Published : February 28, 2017

Eunjin Jung ¹, Myung-Hyun Lee ¹, Yong Jin Kwon ¹, Doojin Choi ², Kang, Seung-Min ³, Younghee Kim ¹

¹한국세라믹기술원
²연세대학교
³한서대학교

Accredited

ABSTRACT

High-purity β-SiC powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity β-SiC powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the β-SiC powders to more than 99 % and increased the particle size to as much as ~100 μm. The β-SiC powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.

KEYWORDS

β-SiC powder, Direct carbonization, High purity

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Preparation of particle-size-controlled SiC powder for single-crystal growth

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Preparation of particle-size-controlled SiC powder for single-crystal growth

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