Numerical simulation optimization for solution growth of silicon carbide (SiC 용액 성장을 위한 수치 시뮬레이션의 최적화)

Young-Gon Kim (김영곤); Su-Hun Choi (최수훈); Chae Young Lee (이채영); Jeong Min Choi (최정민); Mi-Seon Park (박미선); Yeon-Suk Jang (장연숙); Seongmin Jeong (정성민); Myung-Hyun Lee (이명현); Younghee Kim (김영희); Won-Seon Seo (서원선); Lee Won Jae (이원재)

doi:10.6111/JKCGCT.2017.27.3.130

Numerical simulation optimization for solution growth of silicon carbide

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2017, 27(3), pp.130~134
DOI : 10.6111/JKCGCT.2017.27.3.130
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : April 21, 2017
Accepted : June 7, 2017
Published : June 30, 2017

Young-Gon Kim ¹, Su-Hun Choi ¹, Chae Young Lee ¹, Jeong Min Choi ¹, Mi-Seon Park ¹, Yeon-Suk Jang ¹, Seongmin Jeong ², Myung-Hyun Lee ², Younghee Kim ², Won-Seon Seo ², Lee Won Jae ¹

¹동의대학교
²한국세라믹기술원

Accredited

ABSTRACT

In this study, numerical simulation was performed to focus on optimized process condition for obtaining a longterm growth and high quality SiC crystal. It could be optimized by considering the change of fluid and a carbon flow in the Si melt added with 40 % Cr. The Crystal Growth Simulator (CGSim TM , STR Group Ltd.) was used as a numerical simulation. It was confirmed that many parameters such as temperature, rotation speed of seed crystal and crucible, and seed position during the crystal growth step had a strong influence on the speed and direction of solution flow for uniform temperature gradient and stable crystal growth. The optimized process condition for the solution growth of SiC crystal was successfully exhibited by adjusting various process parameters in the numerical simulation, which would be helpful for real crystal growth.

KEYWORDS

Solution growth, Silicon carbide, CGSim, Carbon flow, Solution flow, Numerical simulation

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[journal] I. D. Matukov / 2004 / Modeling of facet formation in SiC bulk crystal growth / J. Crystal Growth 266 : 313~

[journal] Yu. M. Tairov / 1981 / General principles of growing large-size single crystals of various silicon carbide polytypes / J. Crystal Growth 52 : 146~

[journal] Y. Chen / 2009 / Studies of the distribution of elementary threading screw dislocations in 4H silicon carbide wafer / Mater. Sci. Forum 600-603 : 301~

[journal] K. Kamei / 2012 / Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution / Mater. Sci. Forum 717-720 : 45~

[journal] K. Kusunoki / 2014 / Top-seeded solution growth of 3 inch diameter 4H-SiC bulk crystal using metal solvents / Mater. Sci. Forum 778-780 : 79~

[journal] F. Mercier / 2011 / Solution growth of SiC from silicon melts: influence of the alternative magnetic field on fluid dynamics / J. Crystal Growth 318 : 385~

[journal] K. Fujii / 2015 / Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC / Mater. Sci. Forum 821-823 : 35~

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Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Numerical simulation optimization for solution growth of silicon carbide

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* References for papers published after 2025 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2025 KCI Impact Factor : 0.14 KCI-WoS Impact Factor : 0.45

Numerical simulation optimization for solution growth of silicon carbide

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* References for papers published after 2025 are currently being built.