Numerical simulation optimization for solution growth of silicon carbide (SiC 용액 성장을 위한 수치 시뮬레이션의 최적화)

Young-Gon Kim (김영곤); Su-Hun Choi (최수훈); Chae Young Lee (이채영); Jeong Min Choi (최정민); Mi-Seon Park (박미선); Yeon-Suk Jang (장연숙); Seongmin Jeong (정성민); Myung-Hyun Lee (이명현); Younghee Kim (김영희); Won-Seon Seo (서원선); Lee, Won Jae (이원재)

doi:10.6111/JKCGCT.2017.27.3.130

@article{ART002234650},
author={Young-Gon Kim and Su-Hun Choi and Chae Young Lee and Jeong Min Choi and Mi-Seon Park and Yeon-Suk Jang and Seongmin Jeong and Myung-Hyun Lee and Younghee Kim and Won-Seon Seo and Lee, Won Jae},
title={Numerical simulation optimization for solution growth of silicon carbide},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2017},
volume={27},
number={3},
pages={130-134},
doi={10.6111/JKCGCT.2017.27.3.130}

TY - JOUR
AU - Young-Gon Kim
AU - Su-Hun Choi
AU - Chae Young Lee
AU - Jeong Min Choi
AU - Mi-Seon Park
AU - Yeon-Suk Jang
AU - Seongmin Jeong
AU - Myung-Hyun Lee
AU - Younghee Kim
AU - Won-Seon Seo
AU - Lee, Won Jae
TI - Numerical simulation optimization for solution growth of silicon carbide
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2017
VL - 27
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 130
EP - 134
SN - 1225-1429
AB - In this study, numerical simulation was performed to focus on optimized process condition for obtaining a longterm growth and high quality SiC crystal. It could be optimized by considering the change of fluid and a carbon flow in the Si melt added with 40 % Cr. The Crystal Growth Simulator (CGSim TM , STR Group Ltd.) was used as a numerical simulation. It was confirmed that many parameters such as temperature, rotation speed of seed crystal and crucible, and seed position during the crystal growth step had a strong influence on the speed and direction of solution flow for uniform temperature gradient and stable crystal growth. The optimized process condition for the solution growth of SiC crystal was successfully exhibited by adjusting various process parameters in the numerical simulation, which would be helpful for real crystal growth.
KW - Solution growth;Silicon carbide;CGSim;Carbon flow;Solution flow;Numerical simulation
DO - 10.6111/JKCGCT.2017.27.3.130
ER -

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo and Lee, Won Jae. (2017). Numerical simulation optimization for solution growth of silicon carbide. Journal of the Korean Crystal Growth and Crystal Technology, 27(3), 130-134.

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo and Lee, Won Jae. 2017, "Numerical simulation optimization for solution growth of silicon carbide", Journal of the Korean Crystal Growth and Crystal Technology, vol.27, no.3 pp.130-134. Available from: doi:10.6111/JKCGCT.2017.27.3.130

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo, Lee, Won Jae "Numerical simulation optimization for solution growth of silicon carbide" Journal of the Korean Crystal Growth and Crystal Technology 27.3 pp.130-134 (2017) : 130.

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo, Lee, Won Jae. Numerical simulation optimization for solution growth of silicon carbide. 2017; 27(3), 130-134. Available from: doi:10.6111/JKCGCT.2017.27.3.130

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo and Lee, Won Jae. "Numerical simulation optimization for solution growth of silicon carbide" Journal of the Korean Crystal Growth and Crystal Technology 27, no.3 (2017) : 130-134.doi: 10.6111/JKCGCT.2017.27.3.130

Young-Gon Kim; Su-Hun Choi; Chae Young Lee; Jeong Min Choi; Mi-Seon Park; Yeon-Suk Jang; Seongmin Jeong; Myung-Hyun Lee; Younghee Kim; Won-Seon Seo; Lee, Won Jae. Numerical simulation optimization for solution growth of silicon carbide. Journal of the Korean Crystal Growth and Crystal Technology, 27(3), 130-134. doi: 10.6111/JKCGCT.2017.27.3.130

Young-Gon Kim; Su-Hun Choi; Chae Young Lee; Jeong Min Choi; Mi-Seon Park; Yeon-Suk Jang; Seongmin Jeong; Myung-Hyun Lee; Younghee Kim; Won-Seon Seo; Lee, Won Jae. Numerical simulation optimization for solution growth of silicon carbide. Journal of the Korean Crystal Growth and Crystal Technology. 2017; 27(3) 130-134. doi: 10.6111/JKCGCT.2017.27.3.130

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo, Lee, Won Jae. Numerical simulation optimization for solution growth of silicon carbide. 2017; 27(3), 130-134. Available from: doi:10.6111/JKCGCT.2017.27.3.130

Young-Gon Kim, Su-Hun Choi, Chae Young Lee, Jeong Min Choi, Mi-Seon Park, Yeon-Suk Jang, Seongmin Jeong, Myung-Hyun Lee, Younghee Kim, Won-Seon Seo and Lee, Won Jae. "Numerical simulation optimization for solution growth of silicon carbide" Journal of the Korean Crystal Growth and Crystal Technology 27, no.3 (2017) : 130-134.doi: 10.6111/JKCGCT.2017.27.3.130

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Numerical simulation optimization for solution growth of silicon carbide

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Numerical simulation optimization for solution growth of silicon carbide

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