@article{ART002234678},
author={Hyo Sang Kang and Suk Hyun Kang and Cheol Woo Park and Jae Hwa Park and Hyun-Mi Kim and Jung Hun Lee and Hee Ae Lee and Joo Hyung Lee and Kang, Seung-Min and Kwang Bo Shim},
title={The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2017},
volume={27},
number={3},
pages={143-147},
doi={10.6111/JKCGCT.2017.27.3.143}
TY - JOUR
AU - Hyo Sang Kang
AU - Suk Hyun Kang
AU - Cheol Woo Park
AU - Jae Hwa Park
AU - Hyun-Mi Kim
AU - Jung Hun Lee
AU - Hee Ae Lee
AU - Joo Hyung Lee
AU - Kang, Seung-Min
AU - Kwang Bo Shim
TI - The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2017
VL - 27
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 143
EP - 147
SN - 1225-1429
AB - To evaluate surface characteristics and improve crystalline quality of AlN single crystal grown by physical vapor transport (PVT) method, wet chemical etching process using KOH/H2O2 mixture in a low temperature condition and thermal annealing process was proceeded respectively. Conventional etching process using strong base etchant at a high temperature (above 300 o C) had formed over etching phenomenon according to crystalline quality of materials. When it occurred to over etching phenomenon, it had a low reliability of dislocation density because it cannot show correct number of etch pits per estimated area. Therefore, it was proceeded to etching process in a low temperature (below 100 o C) using H2O2 as an oxidizer in KOH aqueous solution and to be determined optimum etching condition and dislocation density via scanning electron microscope (SEM). For improving crystalline quality of AlN single crystal, thermal annealing process was proceeded. When compared with specimens as-prepared and as-annealed, full width at half maximum (FWHM) of the specimen as-annealed was decreased exponentially, and we analyzed the mechanism of this process via double crystal X-ray diffraction (DC-XRD).
KW - Aluminum nitride;Wet chemical etching;Thermal annealing process
DO - 10.6111/JKCGCT.2017.27.3.143
ER -
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min and Kwang Bo Shim. (2017). The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method. Journal of the Korean Crystal Growth and Crystal Technology, 27(3), 143-147.
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min and Kwang Bo Shim. 2017, "The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method", Journal of the Korean Crystal Growth and Crystal Technology, vol.27, no.3 pp.143-147. Available from: doi:10.6111/JKCGCT.2017.27.3.143
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min, Kwang Bo Shim "The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method" Journal of the Korean Crystal Growth and Crystal Technology 27.3 pp.143-147 (2017) : 143.
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min, Kwang Bo Shim. The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method. 2017; 27(3), 143-147. Available from: doi:10.6111/JKCGCT.2017.27.3.143
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min and Kwang Bo Shim. "The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method" Journal of the Korean Crystal Growth and Crystal Technology 27, no.3 (2017) : 143-147.doi: 10.6111/JKCGCT.2017.27.3.143
Hyo Sang Kang; Suk Hyun Kang; Cheol Woo Park; Jae Hwa Park; Hyun-Mi Kim; Jung Hun Lee; Hee Ae Lee; Joo Hyung Lee; Kang, Seung-Min; Kwang Bo Shim. The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method. Journal of the Korean Crystal Growth and Crystal Technology, 27(3), 143-147. doi: 10.6111/JKCGCT.2017.27.3.143
Hyo Sang Kang; Suk Hyun Kang; Cheol Woo Park; Jae Hwa Park; Hyun-Mi Kim; Jung Hun Lee; Hee Ae Lee; Joo Hyung Lee; Kang, Seung-Min; Kwang Bo Shim. The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method. Journal of the Korean Crystal Growth and Crystal Technology. 2017; 27(3) 143-147. doi: 10.6111/JKCGCT.2017.27.3.143
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min, Kwang Bo Shim. The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method. 2017; 27(3), 143-147. Available from: doi:10.6111/JKCGCT.2017.27.3.143
Hyo Sang Kang, Suk Hyun Kang, Cheol Woo Park, Jae Hwa Park, Hyun-Mi Kim, Jung Hun Lee, Hee Ae Lee, Joo Hyung Lee, Kang, Seung-Min and Kwang Bo Shim. "The study of evaluating surface characteristics and effect of thermal annealing process for AlN single crystal grown by PVT method" Journal of the Korean Crystal Growth and Crystal Technology 27, no.3 (2017) : 143-147.doi: 10.6111/JKCGCT.2017.27.3.143
