@article{ART002357005},
author={Jong Won Lim and Tae Heui Kim and Kyung Bong Park},
title={Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2018},
volume={28},
number={3},
pages={99-105},
doi={10.6111/JKCGCT.2018.28.3.099}
TY - JOUR
AU - Jong Won Lim
AU - Tae Heui Kim
AU - Kyung Bong Park
TI - Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2018
VL - 28
IS - 3
PB - The Korea Association Of Crystal Growth, Inc.
SP - 99
EP - 105
SN - 1225-1429
AB - In order to avoid un-uniform crystallization on the surface of a quartz glass crucible that is known to affect the production yield of the single crystal silicon, Ba (barium) was selected as a crystallization promotor and the inner surface of the crucible was coated using Ba (barium hydroxide octahydrate)-solution by the spray pyrolysis method. For un-coated crucible, it was found that the crystallization of its surface started at 1350 o C, and at 1450 o C the surface was uniformly crystallized with β-cristobalite phase. It was found that the crucible coated with Ba began to be crystallized from 1000 o C and was uniformly crystallized on the crucible surface at 1300 o C. In this case, α-cristobalite and needle-shaped BaSi2O5 phase were created and disappeared as a crystal phase, and the β-cristobalite phase was eventually evenly distributed over the Ba-coated crucible surface.
KW - Quartz glass crucible;Crystallization;Spray pyrolysis;Cristobalite;Single crystal silicon
DO - 10.6111/JKCGCT.2018.28.3.099
ER -
Jong Won Lim, Tae Heui Kim and Kyung Bong Park. (2018). Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon. Journal of the Korean Crystal Growth and Crystal Technology, 28(3), 99-105.
Jong Won Lim, Tae Heui Kim and Kyung Bong Park. 2018, "Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon", Journal of the Korean Crystal Growth and Crystal Technology, vol.28, no.3 pp.99-105. Available from: doi:10.6111/JKCGCT.2018.28.3.099
Jong Won Lim, Tae Heui Kim, Kyung Bong Park "Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon" Journal of the Korean Crystal Growth and Crystal Technology 28.3 pp.99-105 (2018) : 99.
Jong Won Lim, Tae Heui Kim, Kyung Bong Park. Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon. 2018; 28(3), 99-105. Available from: doi:10.6111/JKCGCT.2018.28.3.099
Jong Won Lim, Tae Heui Kim and Kyung Bong Park. "Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon" Journal of the Korean Crystal Growth and Crystal Technology 28, no.3 (2018) : 99-105.doi: 10.6111/JKCGCT.2018.28.3.099
Jong Won Lim; Tae Heui Kim; Kyung Bong Park. Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon. Journal of the Korean Crystal Growth and Crystal Technology, 28(3), 99-105. doi: 10.6111/JKCGCT.2018.28.3.099
Jong Won Lim; Tae Heui Kim; Kyung Bong Park. Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon. Journal of the Korean Crystal Growth and Crystal Technology. 2018; 28(3) 99-105. doi: 10.6111/JKCGCT.2018.28.3.099
Jong Won Lim, Tae Heui Kim, Kyung Bong Park. Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon. 2018; 28(3), 99-105. Available from: doi:10.6111/JKCGCT.2018.28.3.099
Jong Won Lim, Tae Heui Kim and Kyung Bong Park. "Study on the crystallization of quartz glass crucibles for preparation of single crystal silicon" Journal of the Korean Crystal Growth and Crystal Technology 28, no.3 (2018) : 99-105.doi: 10.6111/JKCGCT.2018.28.3.099
