Influence of relative distance between heater and quartz crucible on temperature profile of hot-zone in Czochralski silicon crystal growth (쵸크랄스키법 실리콘 성장로에서 핫존 온도분포 경향에 대한 히터와 석영도가니의상대적 위치의 영향)

Kwanghun Kim (김광훈); Sejin Kwon (권세진); Ilhwan Kim (김일환); Junseong Park (박준성); Taehun Shim (심태헌); Jeagun Park (박재근)

doi:10.6111/JKCGCT.2018.28.5.179

Influence of relative distance between heater and quartz crucible on temperature profile of hot-zone in Czochralski silicon crystal growth

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2018, 28(5), pp.179-184
DOI : 10.6111/JKCGCT.2018.28.5.179
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : September 20, 2018
Accepted : October 12, 2018
Published : October 31, 2018

Kwanghun Kim ¹, Sejin Kwon ¹, Ilhwan Kim ², Junseong Park ², Taehun Shim ², Jeagun Park ²

¹웅진에너지 연구소
²한양대학교

Accredited

ABSTRACT

To lessen oxygen concentrations in a wafer through modifying the length of graphite heaters, we investigated the influence of relative distance from heater to quartz crucible on temperature profile of hot-zone in Czochralski siliconcrystal growth by simulation. In particular, ATC temperature and power profiles as a function of different ingot body positions were investigated for five different heater designs; (a) typical side heater (SH), (b) short side heater-up (SSH-up), (c) short side heater-low (SSH-low), (d) bottom heater without side heater (Only-BH), and (e) side heater with bottom heater (SH + BH). It was confirmed that lower short side heater exhibited the highest ATC temperature, which was attributed to the longest distance from triple point to heater center. In addition, for the viewpoint of energy efficiency, it was observed that the typical side heater showed the lowest power because it heated more area of quartz crucible than that of others. This result provides the possibility to predict the feed-forward delta temperature profile as a function of various heater designs.

KEYWORDS

Czochralski method, Temperature profile, Silicon single crystal ingot, Charge size, Solar industry

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Influence of relative distance between heater and quartz crucible on temperature profile of hot-zone in Czochralski silicon crystal growth

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Influence of relative distance between heater and quartz crucible on temperature profile of hot-zone in Czochralski silicon crystal growth

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