MgO doping and annealing effect on high temperature electrical resistivity of AlN-Y2O3 ceramics (MgO doping 및 annealing이 AlN-Y2O3 세라믹스의 고온전기저항에 미치는 영향)

YOUDONGSU (유동수); Sung-Min Lee (이성민); Kwangtaek Hwang (황광택); Jong-Young Kim (김종영); Wooyoung Shim (심우영)

doi:10.6111/JKCGCT.2018.28.6.263

MgO doping and annealing effect on high temperature electrical resistivity of AlN-Y2O3 ceramics

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2018, 28(6), pp.235-242
DOI : 10.6111/JKCGCT.2018.28.6.263
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Published : December 31, 2018

YOUDONGSU ¹, Sung-Min Lee ¹, Kwangtaek Hwang ¹, Jong-Young Kim ¹, Wooyoung Shim ²

¹한국세라믹기술원
²연세대학교

Accredited

ABSTRACT

High temperature electrical conductivity of Aluminum Nitride (AlN) ceramics sintered with Y2O3 as a sintering aid has been investigated with respect to various sintering conditions and MgO-dopant. When magnesium oxide is added as a dopant, liquid glass-film and crystalline phases such as spinel, perovskite are formed as second phases, which affects their electrical properties. According to high temperature impedance analysis, MgO doping leads to reduction of activation energy and electrical resistivity due to AlN grains. On the other hand, the activation energy and electrical resistivity due to grain boundary were increased by MgO doping. This is a result of the formation of liquid glass film in the grain boundary, which contains Mg ions, or the elevation of schottky barrier due to the precipitation of Mg in the grain boundary. For the annealed sample of MgO doped AlN, the electrical resistivity and activation energy were increased further compared to MgO doped AlN, which results from diffusion of Mg in the grains from grain boundary as shown in the microstructure.

KEYWORDS

Alumina nitride, Electrical conductivity, Impedance spectroscopy, Electrostatic chuck, Microstructure

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

MgO doping and annealing effect on high temperature electrical resistivity of AlN-Y2O3 ceramics

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

MgO doping and annealing effect on high temperature electrical resistivity of AlN-Y2O3 ceramics

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