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@article{ART002459684},
author={Ji-Hyun Hwang and Su-Won Yang and KIM YOUNG KWAN},
title={Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2019},
volume={29},
number={2},
pages={50-53},
doi={10.6111/JKCGCT.2019.29.2.050}

TY - JOUR
AU - Ji-Hyun Hwang
AU - Su-Won Yang
AU - KIM YOUNG KWAN
TI - Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2019
VL - 29
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 50
EP - 53
SN - 1225-1429
AB - In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with Al2O3. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the Al2O3 diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at 500 o C and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be 15.9 μm.
KW - RTA (Rapid Thermal Annealing);AIC (Aluminum Induced Crystallization);Alumina blasting;Silicon thin film crystallization
DO - 10.6111/JKCGCT.2019.29.2.050
ER -

Ji-Hyun Hwang, Su-Won Yang and KIM YOUNG KWAN. (2019). Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film. Journal of the Korean Crystal Growth and Crystal Technology, 29(2), 50-53.

Ji-Hyun Hwang, Su-Won Yang and KIM YOUNG KWAN. 2019, "Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film", Journal of the Korean Crystal Growth and Crystal Technology, vol.29, no.2 pp.50-53. Available from: doi:10.6111/JKCGCT.2019.29.2.050

Ji-Hyun Hwang, Su-Won Yang, KIM YOUNG KWAN "Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film" Journal of the Korean Crystal Growth and Crystal Technology 29.2 pp.50-53 (2019) : 50.

Ji-Hyun Hwang, Su-Won Yang, KIM YOUNG KWAN. Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film. 2019; 29(2), 50-53. Available from: doi:10.6111/JKCGCT.2019.29.2.050

Ji-Hyun Hwang, Su-Won Yang and KIM YOUNG KWAN. "Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film" Journal of the Korean Crystal Growth and Crystal Technology 29, no.2 (2019) : 50-53.doi: 10.6111/JKCGCT.2019.29.2.050

Ji-Hyun Hwang; Su-Won Yang; KIM YOUNG KWAN. Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film. Journal of the Korean Crystal Growth and Crystal Technology, 29(2), 50-53. doi: 10.6111/JKCGCT.2019.29.2.050

Ji-Hyun Hwang; Su-Won Yang; KIM YOUNG KWAN. Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film. Journal of the Korean Crystal Growth and Crystal Technology. 2019; 29(2) 50-53. doi: 10.6111/JKCGCT.2019.29.2.050

Ji-Hyun Hwang, Su-Won Yang, KIM YOUNG KWAN. Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film. 2019; 29(2), 50-53. Available from: doi:10.6111/JKCGCT.2019.29.2.050

Ji-Hyun Hwang, Su-Won Yang and KIM YOUNG KWAN. "Application of rapid thermal annealing process to the aluminum induced crystallization of amorphous silicon thin film" Journal of the Korean Crystal Growth and Crystal Technology 29, no.2 (2019) : 50-53.doi: 10.6111/JKCGCT.2019.29.2.050