p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method (혼합소스 HVPE 방법에 의한 전력 반도체 소자용 p형 AlN 에피층 성장)

GANG SEOK LEE (이강석); Kyoung-Hwa Kim (김경화); Sang Woo Kim (김상우); Jeon Injun (전인준); Hyung Soo Ahn (안형수); Min Yang (양민); Sam Nyung Yi (이삼녕); Cho， Chae-Ryong (조채용); Kim Suck Whan (김석환)

doi:10.6111/JKCGCT.2019.29.3.083

p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(3), pp.83-90
DOI : 10.6111/JKCGCT.2019.29.3.083
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : May 20, 2019
Accepted : June 12, 2019
Published : June 30, 2019

GANG SEOK LEE ¹, Kyoung-Hwa Kim ¹, Sang Woo Kim ¹, Jeon Injun ², Hyung Soo Ahn ¹, Min Yang ¹, Sam Nyung Yi ¹, Cho， Chae-Ryong ², Kim Suck Whan ³

¹한국해양대학교
²부산대학교
³안동대학교

Accredited

ABSTRACT

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydridevapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on theGaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substratesfor device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigatedby field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-rayphotoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-sourceHVPE method could be applied to power devices.

KEYWORDS

p-Type AlN, Mg-doped, Mixed-source, HVPE method, Power semiconductor device

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Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method

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* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

p-Type AlN epilayer growth for power semiconductor device by mixed-source HVPE method

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KEYWORDS

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