Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing (분말 스퍼터링과 후열처리 복합 공정으로 제조한 주석 함유 갈륨 산화물 다공성 나노와이어)

Haram Lee (이하람); HYON CHOL KANG (강현철)

doi:10.6111/JKCGCT.2019.29.6.245

Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(6), pp.245~250
DOI : 10.6111/JKCGCT.2019.29.6.245
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : October 26, 2019
Accepted : November 18, 2019
Published : December 31, 2019

Haram Lee ¹, HYON CHOL KANG ²

¹조선대학교 재료공학과
²조선대학교

Accredited

ABSTRACT

We investigated the post-annealing effect of Sn-incorporated β-Ga2O3 (β-Ga2O3 : Sn) nanowires (NWs) grown onsapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga2O3 : Sn NWs were converted to a porousstructure during the vacuum annealing process at 800°C. Host non-stoichiometric Ga2O3-x, is transformed into stoichiometric Ga2O3, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result,the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga2O3 : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga2O3 : Sn NWs.

KEYWORDS

Sn-incorporated Ga2O3, Nanowires, Porous structure, Powder sputtering, Annealing

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