Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing (분말 스퍼터링과 후열처리 복합 공정으로 제조한 주석 함유 갈륨 산화물 다공성 나노와이어)

Haram Lee (이하람); HYON CHOL KANG (강현철)

doi:10.6111/JKCGCT.2019.29.6.245

Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing

Journal of the Korean Crystal Growth and Crystal Technology
Abbr : J. Korean Cryst. Growth Cryst. Technol.
2019, 29(6), pp.245-250
DOI : 10.6111/JKCGCT.2019.29.6.245
Publisher : The Korea Association Of Crystal Growth, Inc.
Research Area : Engineering > Materials Science and Engineering
Received : October 26, 2019
Accepted : November 18, 2019
Published : December 31, 2019

Haram Lee ¹, HYON CHOL KANG ²

¹조선대학교 재료공학과
²조선대학교

Accredited

ABSTRACT

We investigated the post-annealing effect of Sn-incorporated β-Ga2O3 (β-Ga2O3 : Sn) nanowires (NWs) grown onsapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga2O3 : Sn NWs were converted to a porousstructure during the vacuum annealing process at 800°C. Host non-stoichiometric Ga2O3-x, is transformed into stoichiometric Ga2O3, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result,the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga2O3 : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga2O3 : Sn NWs.

KEYWORDS

Sn-incorporated Ga2O3, Nanowires, Porous structure, Powder sputtering, Annealing

Citation status

* References for papers published after 2023 are currently being built.

[journal] S. J. Pearton / 2018 / A review of Ga2O3 materials, processing, and devices / Appl. Phys. Rev 5 : 011301~

[journal] L. Nagarajan / 2008 / A chemically driven insulator-metal transition in non-stoichiometric and amorphous gallium oxide / Nature Mater 7 : 391~

[journal] M. Higashiwaki / 2013 / Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics / Appl. Phys. Lett 103 : 123511~

[journal] A. Petitmangin / 2011 / Metallic clusters in nonstoichiometric gallium oxide films / J. Appl. Phys 109 : 013711~

[journal] Y. Aoki / 2014 / Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour / Nature Commun 5 : 3473~

[journal] K. D. Chabak / 2016 / Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage / Appl. Phys. Lett 109 : 213501~

[journal] W. Tian / 2012 / In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse / J. Mater. Chem 22 : 17984~

[journal] L. Mazeina / 2009 / Growth of Sn-doped β-Ga2O3 nanowires and Ga2O3-SnO2 heterostructures for gas sensing applications / Cryst. Growth Des 9 : 4471~

[journal] G. Cabello / 2013 / Evaluation on the optical properties of Ga2O3x thin films co-doped with Tb 3+and transition metals (Mn 2+, Cr 3+) prepared by a photochemical route / Ceram. Int 39 : 2443~

[journal] K. Sasaki / 2013 / Si-ion implantation doping in β-Ga2O3and its application to fabrication of low-resistance Ohmic contacts / Appl. Phys. Exp 6 : 086502~

[journal] M. Higashiwaki / 2016 / Recent progress in Ga2O3 power devices / Semicond. Sci. Technol 31 : 034001~

[journal] A. T. Neal / 2018 / Donors and deep acceptors in β-Ga2O3 / Appl. Phys. Lett 113 : 062101~

[journal] K. Akaiwa / 2016 / Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates / Jap. J. Appl. Phys 55 : 1202~

[journal] I. López / 2012 / In-doped gallium oxide micro- and nanostructures:morphology, structure, and luminescence properties / J. Phys. Chem. B 116 : 3935~

[journal] S. I. Maximenko / 2009 / Cathodoluminescence studies of the inhomogeneities in Sn-doped Ga2O3nanowires / Nano. Lett 9 : 3245~

[journal] S. Y. Park / 2013 / Self-catalytic growth of β-Ga2O3 nanowires deposited by radio-frequency magnetron sputtering / Appl. Phys. Exp 6 : 105001~

[journal] S. Y. Lee / 2016 / Growth mechanism of In-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering / Mater. Lett 176 : 213~

[journal] S. Y. Lee / 2015 / Synthesis and characterization of β-Ga2O3 nanowires on amorphous substrates using radio-frequency powder sputtering / J. Cryst. Growth 412 : 25~

[journal] S. Y. Lee / 2018 / Sn-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering / Jpn. J. Appl. Phys 57 : 01AE02~

[journal] R. Roy / 1952 / Polymorphism of Ga2O3 and the system Ga2O3-H2O / J. Am. Chem. Soc 74 : 719~

[journal] S. Zhang / 2014 / Nanostructured tin catalysts for selective electrochemical reduction of carbon dioxide to Formate / J. Am. Chem. Soc 136 : 1734~

[journal] N. Chiodini / 2001 / Thermally induced segregation of SnO2 nanoclusters in Sn-doped silica glasses from oversaturated Sn-doped silica xerogels / J. Mater. Chem 11 : 926~

[journal] 이하람 / 2018 / Annealing of Sn Doped ZnO Thin Films Grown by Radio Frequency Powder Sputtering / 열처리공학회지 / 한국열처리공학회 31(3) : 1~9

[journal] A. Battu / 2018 / Nanomechanical characterization of titanium incorporated gallium oxide nanocrystalline thin films / Mater. Today Nano 2 : 7~

[journal] E. J. Rubio / 2016 / Tungsten incorporation into gallium oxide: Crystal structure, surface and interface chemistry, thermal stability, and interdiffusion / J. Phys. Chem. C 120 : 26720~

KJCKorea
Journal Central

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing

ABSTRACT

KEYWORDS

Citation status

* References for papers published after 2023 are currently being built.

Journal of the Korean Crystal Growth and Crystal Technology 2023 KCI Impact Factor : 0.19

Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing

ABSTRACT

KEYWORDS

Statistics

Tools

Issue List

Citation status

KCI Citation Counts (0)

REFERENCES (25) * References for papers published after 2023 are currently being built.

Search PDF

Citation

* References for papers published after 2023 are currently being built.