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@article{ART002562919},
author={Kyungwook Park and Young-Hoon Yun},
title={Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2020},
volume={30},
number={1},
pages={1-6},
doi={10.6111/JKCGCT.2020.30.1.001}

TY - JOUR
AU - Kyungwook Park
AU - Young-Hoon Yun
TI - Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2020
VL - 30
IS - 1
PB - The Korea Association Of Crystal Growth, Inc.
SP - 1
EP - 6
SN - 1225-1429
AB - In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.
KW - Aluminium nitride (AlN);Sapphire (Al2O3);Gallium nitride (GaN);Lattice constant;Lattice mismatch;Crystal quality
DO - 10.6111/JKCGCT.2020.30.1.001
ER -

Kyungwook Park and Young-Hoon Yun. (2020). Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology, 30(1), 1-6.

Kyungwook Park and Young-Hoon Yun. 2020, "Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate", Journal of the Korean Crystal Growth and Crystal Technology, vol.30, no.1 pp.1-6. Available from: doi:10.6111/JKCGCT.2020.30.1.001

Kyungwook Park, Young-Hoon Yun "Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 30.1 pp.1-6 (2020) : 1.

Kyungwook Park, Young-Hoon Yun. Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate. 2020; 30(1), 1-6. Available from: doi:10.6111/JKCGCT.2020.30.1.001

Kyungwook Park and Young-Hoon Yun. "Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 30, no.1 (2020) : 1-6.doi: 10.6111/JKCGCT.2020.30.1.001

Kyungwook Park; Young-Hoon Yun. Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology, 30(1), 1-6. doi: 10.6111/JKCGCT.2020.30.1.001

Kyungwook Park; Young-Hoon Yun. Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate. Journal of the Korean Crystal Growth and Crystal Technology. 2020; 30(1) 1-6. doi: 10.6111/JKCGCT.2020.30.1.001

Kyungwook Park, Young-Hoon Yun. Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate. 2020; 30(1), 1-6. Available from: doi:10.6111/JKCGCT.2020.30.1.001

Kyungwook Park and Young-Hoon Yun. "Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate" Journal of the Korean Crystal Growth and Crystal Technology 30, no.1 (2020) : 1-6.doi: 10.6111/JKCGCT.2020.30.1.001