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@article{ART002580682},
author={Joo Hyung Lee and LEESEUNGHOON and Hee Ae Lee and Hyo Sang Kang and Oh Nuri and Sung Yi and Seong Kuk Lee and Jae Hwa Park},
title={Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE},
journal={Journal of the Korean Crystal Growth and Crystal Technology},
issn={1225-1429},
year={2020},
volume={30},
number={2},
pages={41-46},
doi={10.6111/JKCGCT.2020.30.2.041}

TY - JOUR
AU - Joo Hyung Lee
AU - LEESEUNGHOON
AU - Hee Ae Lee
AU - Hyo Sang Kang
AU - Oh Nuri
AU - Sung Yi
AU - Seong Kuk Lee
AU - Jae Hwa Park
TI - Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE
JO - Journal of the Korean Crystal Growth and Crystal Technology
PY - 2020
VL - 30
IS - 2
PB - The Korea Association Of Crystal Growth, Inc.
SP - 41
EP - 46
SN - 1225-1429
AB - The characteristics of the residual stress on the types of the substrate was investigated with adjusting the V/IIIratio during GaN growth via the HVPE method. GaN single crystal layers were grown on a sapphire substrate and a GaNtemplate under the conditions of V/III ratio 5, 10, and 15, respectively. During GaN growth, multiple hexagonal pits inGaN single crystal were differently revealed in accordance with growth condition and substrate type, and their distributionand depth were measured via optical microscopy(OM) and white light interferometry(WLI). As a result, it was confirmedthat the distribution area and depth of hexagonal pit tended to increase as the V/III ratio increased. Moreover, it was foundthat the residual stress in GaN single crystal decreased as the distribution area and depth of the pit increased throughmeasuring micro Raman spectrophotometer. In the case of GaN growth according to substrate type, the GaN on GaNtemplate showed lower residual stress than the GaN grown on sapphire substrate.
KW - Gallium nitride;HVPE;V/III ratio;Hexagonal pit;Stress
DO - 10.6111/JKCGCT.2020.30.2.041
ER -

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee and Jae Hwa Park. (2020). Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 30(2), 41-46.

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee and Jae Hwa Park. 2020, "Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE", Journal of the Korean Crystal Growth and Crystal Technology, vol.30, no.2 pp.41-46. Available from: doi:10.6111/JKCGCT.2020.30.2.041

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee, Jae Hwa Park "Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 30.2 pp.41-46 (2020) : 41.

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee, Jae Hwa Park. Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE. 2020; 30(2), 41-46. Available from: doi:10.6111/JKCGCT.2020.30.2.041

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee and Jae Hwa Park. "Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 30, no.2 (2020) : 41-46.doi: 10.6111/JKCGCT.2020.30.2.041

Joo Hyung Lee; LEESEUNGHOON; Hee Ae Lee; Hyo Sang Kang; Oh Nuri; Sung Yi; Seong Kuk Lee; Jae Hwa Park. Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE. Journal of the Korean Crystal Growth and Crystal Technology, 30(2), 41-46. doi: 10.6111/JKCGCT.2020.30.2.041

Joo Hyung Lee; LEESEUNGHOON; Hee Ae Lee; Hyo Sang Kang; Oh Nuri; Sung Yi; Seong Kuk Lee; Jae Hwa Park. Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE. Journal of the Korean Crystal Growth and Crystal Technology. 2020; 30(2) 41-46. doi: 10.6111/JKCGCT.2020.30.2.041

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee, Jae Hwa Park. Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE. 2020; 30(2), 41-46. Available from: doi:10.6111/JKCGCT.2020.30.2.041

Joo Hyung Lee, LEESEUNGHOON, Hee Ae Lee, Hyo Sang Kang, Oh Nuri, Sung Yi, Seong Kuk Lee and Jae Hwa Park. "Study on residual stress characteristics according to the substrate type and V/III ratio during GaN growth by HVPE" Journal of the Korean Crystal Growth and Crystal Technology 30, no.2 (2020) : 41-46.doi: 10.6111/JKCGCT.2020.30.2.041