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Comparison of plasma resistance between spray coating films and bulk of CaO-Al2O3-SiO2 glasses under CF4/O2/Ar plasma etching

  • Journal of the Korean Crystal Growth and Crystal Technology
  • Abbr : J. Korean Cryst. Growth Cryst. Technol.
  • 2020, 30(2), pp.66-72
  • DOI : 10.6111/JKCGCT.2020.30.2.066
  • Publisher : The Korea Association Of Crystal Growth, Inc.
  • Research Area : Engineering > Materials Science and Engineering
  • Received : March 6, 2020
  • Accepted : March 28, 2020
  • Published : April 30, 2020

Hyein Na 1 Jewon Park 1 Jae-hyuk Park 2 Dae-gun Kim 2 Sungchurl Choi 3 Kim Hyeong Jun 1

1한국세라믹기술원
2아이원스
3한양대학교

Accredited

ABSTRACT

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasmaresistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk andthe glass coating film were etched with CF4/O2/Ar plasma gas. CAS glass coating film was etched up to 25 times fasterthan the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating filmwas derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition,cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, theCAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

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